MRF9100 Search Results
MRF9100 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
MRF9100 |
![]() |
MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs | Original | 536.52KB | 12 | |||
MRF9100 |
![]() |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs | Original | 398.78KB | 12 | |||
MRF9100R3 |
![]() |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs | Original | 398.78KB | 12 | |||
MRF9100SR3 |
![]() |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs | Original | 398.78KB | 12 |
MRF9100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these |
Original |
MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these |
Original |
MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100 | |
Transistor J182
Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
|
Original |
MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA | |
J182 transistor
Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182
|
Original |
MRF9100/D MRF9100R3 MRF9100SR3 MRF9100R3 J182 transistor J152 mosfet transistor MRF9100 MRF9100SR3 Transistor J182 | |
100B220GW
Abstract: 100B100GW
|
Original |
MRF9100R3 MRF9100SR3 100B220GW 100B100GW | |
100B330JW
Abstract: MRF910 marking Z3 6-pin
|
Original |
MRF9100 MRF9100R3 MRF9100SR3 100B330JW MRF910 marking Z3 6-pin | |
MRF9100L
Abstract: MRF9100LSR3 marking c14 MRF9100 MRF9100LR
|
Original |
MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3 MRF9100L MRF9100LSR3 marking c14 MRF9100 MRF9100LR | |
100B330JW
Abstract: chip resistors 0805 philips MRF9100 esd z10
|
Original |
MRF9100 MRF9100R3 MRF9100SR3 100B330JW chip resistors 0805 philips esd z10 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these |
Original |
MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3 | |
Contextual Info: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these |
Original |
MRF9100 MRF9100R3 MRF9100SR3 | |
Contextual Info: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies |
Original |
MRF9100/D MRF9100R3 MRF9100SR3 MRF9100/D | |
NIPPON CAPACITORS
Abstract: capacitor mttf 100B120JP 100B180JP
|
Original |
MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP | |
stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
|
Original |
SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 | |
TRANSISTOR REPLACEMENT GUIDE
Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
|
Original |
SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor | |
|
|||
Contextual Info: Document Number: MRF5S9100 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. |
Original |
MRF5S9100 MRF5S9100NR1/NBR1. MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100MR1 | |
hatching machine
Abstract: NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1 MRF5S9100NR1
|
Original |
MRF5S9100/D MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 | |
hatching machine
Abstract: NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100
|
Original |
MRF5S9100 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100 | |
NIPPON CAPACITORS
Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 MRF5S9100NR1 ACPR25
|
Original |
MRF5S9100N MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100NR1 NIPPON CAPACITORS A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 ACPR25 | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
|
Original |
||
Contextual Info: Document Number: MRF5S9100N Rev. 5, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with |
Original |
MRF5S9100N MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100NR1 | |
MC9S12XDP384
Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
|
Original |
SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb | |
Mrf648
Abstract: MRF185 MRF373 MRF650 MG4100 MC3PHAC MRF648 applications mpx6115 MPX53 TPV8100B
|
Original |
SG1000CRQ42004 SG1000CRQ42004 Mrf648 MRF185 MRF373 MRF650 MG4100 MC3PHAC MRF648 applications mpx6115 MPX53 TPV8100B | |
M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
|
Original |
SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210 | |
MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
|
Original |
SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications |