MS 3V 1-5 BS Search Results

kb3925qf-b1

Abstract: MS-163K1 RTS5158E MS-1673 BD38 80L6A-30 MS-163K D0802 FMD1 intel g41 msi
Contextual Info: 5 4 3 2 1 +3V +5V TPS51120 PENRYN MS-163K1 MS-1673 VER : 0B Page 31 DC JACK & Selector Page 3,4 Page 29 2008/01/23 VTT(1.05V) +1_5VRUN SC412A HOST D FSB 667/800/1066 LVDS LVDS Page 16 HDMI Page 14 SYS POWER RGB CRT Page 16 +1_8VDIMM SC412A SMDDR_VTERM APL5331

smd marking k301

Abstract: SMD sot23-5 marking E1 sti7xxx K301 marking marking k301 TSH70 TSH71 TSH72 TSH73 TSH74
Contextual Info: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2

Contextual Info: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2

ISL6262

Abstract: 15U20A kb3925 MS-1421 SLG8SP512 hannstar diode DB3 C531 intel g41 msi Socket AM2 sst25vf016b
Contextual Info: 5 4 3 AMT MS-1421 VER : 2.0 05/18 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)

diode DB3 C531

Abstract: MDIO18 intel g41 msi an12948 PC123 s4 2C175 Socket AM2 KB392 kb3925 hannstar
Contextual Info: 5 4 3 AMT MS-1421 VER : 1.0 04/02 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)

diode DB3 C531

Abstract: MS-1421 isl6262 2200P50X0402 sot363 M21 ALC888 intel g41 msi top 246 yn Socket AM2 KB392
Contextual Info: 5 4 3 AMT MS-1421 VER : 2.1 07/19 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)

isl6262

Abstract: diode DB3 C531 kb3925 intel g41 msi hannstar 16-RGB 33P10 0R04 2200P50X0402 max8724e
Contextual Info: 5 4 3 AMT MS-1421 VER : 1.1 06/11 2 D C B +3V +5V TPS51120 DC JACK & Selector Merom 478 Page 3,4 01 : BLOCK DIAGRAM 02 : PLATFORM 03 : Merom-1 CPU (HOST BUS) 04 : Merom-2 CPU (POWER/GND) 05 : 965GM-1 (HOST) 06 : 965GM-2 (DMI / VGA) 07 : 965GM-3 (DDR) 08 : 965GM-4 (Power-1)

ATI SB450

Abstract: max8736 XC-01 CI853 U113D CI846 ic max8736 ati sb400 ATI RC410ME MS-1412
Contextual Info: 5 4 3 2 1 +3V +5V MS-1412 VER:2.0 Intel Yonha CPU+ ATi RC410ME&SB450 Chipset D C 01:BLOCK DIAGRAM 02:PLATFORM 03:Yonah-1 CPU HOST BUS 04:Yonah-2 CPU (POWER/GND) 05:Yonah-3 06:RC410ME(HOST) 07:RC410ME(DDR) 08:RC410ME(VIDEO/PCI-E) 09:RC410ME(POWER/STRAPS)

max8736

Abstract: CI846 CI853 CT360 CI845 CI847 ATI SB450 U113D CT349 CI855
Contextual Info: 5 4 3 2 1 +3V +5V MS-1412 VER:1.1 Intel Yonha CPU+ ATi RC410ME&SB450 Chipset D C 01:BLOCK DIAGRAM 02:PLATFORM 03:Yonah-1 CPU HOST BUS 04:Yonah-2 CPU (POWER/GND) 05:Yonah-3 06:RC410ME(HOST) 07:RC410ME(DDR) 08:RC410ME(VIDEO/PCI-E) 09:RC410ME(POWER/STRAPS)

kb3925qf-b1

Abstract: BAT-BT-CR2032-RH JNC40 80L6A-30 ICS9LPRS110A pi3vdp411 R6018 Socket AM2 ICS9LPRS ich9
Contextual Info: 5 4 3 2 1 +3V +5V TPS51120 PENRYN MS-1673 VER : 0A Page 31 DC JACK & Selector Page 3,4 2007/12/03 Page 29 VTT 1.05V +1_5VRUN SC412A HOST D FSB 667/800/1066 LVDS LVDS Page 16 HDMI Page 14 SYS POWER RGB CRT Page 16 +1_8VDIMM SC412A SMDDR_VTERM APL5331 NORTH

BSS138

Abstract: BSS138 50V Zetex bss138
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA

BSS138TA

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA

Contextual Info: 750D5DD 0GGG352 bSS WA H aNoVeRTER W o rld 's M o s t A d va n ce d Ultra H igh Density DC-DC Converters DC-DC Converters, 100-120 Watt Family Evaluation Boards Available Up to I 2 0 W atts 4 8 and 3 0 0 V D C Input DESCRIPTION NanoVerter modules are high density DCDC converters designed for use in tele­

an5296

Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
Contextual Info: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a

CA3096

Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
Contextual Info: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

BS107PT

Abstract: DSA0037518
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107PT TYPICAL CHARACTERISTICS ID On -On-State Drain Current (Amps) ID(On) - On-State Drain Current (Amps) 1.2 VGS= 10V 6V 1.0 0.8 0.6 4V 0.4 0.2 3V 20 40 60 80 100 0.4 ABSOLUTE MAXIMUM RATINGS. VDS-Drain Source Voltage (Volts)

NJX5412A

Abstract: NJX5412B NJX5412C
Contextual Info: I NEW JAPAN RADIO CO LT» m 45E ]> bSblfiôB 00011Ô2 *ìBfi H N J R C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GaAs FET_ _ _ _ _ _ _ _ _ _ _ _ _ NJX5412 Series D 'T '^ z s • Description NJX5412 series GaAs FET’s with N-channel Schottky barrier recessed gate structure and low noise are designed for in

MGF1102

Abstract: N-Channel, Dual-Gate FET 251C dual-gate
Contextual Info: bSMSâST D017ÔE3 Sbö MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual­ gate FET for L to C band applications.

Contextual Info: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant

Contextual Info: BSZ0908ND PowerStage 3x3 Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mW VGS=4.5 V 25 13 19 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant

BSZ0908ND

Abstract: T1018
Contextual Info: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant

0907ND

Contextual Info: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mW VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant

M54541L

Abstract: driver mitsubishi
Contextual Info: • MITSUBISHI ELEK -CUNEAR} flO 6249826 MITSUBISHI '• • M ITSUBISHI BIPOLAR DIGITAL ICs D E I bS4Tfl2b 00DTD4S t. ELEK LINEAR 80C 0 9 0 4 5 0' T-52-13-25 BI-DIRECTIONAL MOTOR DRIVER DESCRIPTION The M54541L, B I-D IR E C TIO N A L M O T O R DRIVER, consists

Contextual Info: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant