MS2552 Search Results

MS2552 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MS2552		Microsemi	RF & MICROWAVE TRANSISTORS	Original	PDF	211.28KB	4

MS2552 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TACAN 41 RF transistor Abstract: RF transistors TACAN MICROSEMI RF TRANSISTOR MS2552 MS2575 Contextual Info: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product	Original	MS2552 MS2552 MSC1665 TACAN 41 RF transistor RF transistors TACAN MICROSEMI RF TRANSISTOR MS2575	PDF
Contextual Info: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min.	Original	MS2552 MS2552 MSC1665	PDF
Contextual Info: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1	Original	MS2552 MS2552 MS2575 MSC1665	PDF

Catalog Datasheet

Type

Document Tags

PDF

TACAN 41 RF transistor

Abstract: RF transistors TACAN MICROSEMI RF TRANSISTOR MS2552 MS2575
Contextual Info: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product

Original

MS2552 MS2552 MSC1665 TACAN 41 RF transistor RF transistors TACAN MICROSEMI RF TRANSISTOR MS2575

PDF

Contextual Info: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min.

Original

MS2552 MS2552 MSC1665

PDF

Contextual Info: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1

Original

MS2552 MS2552 MS2575 MSC1665

PDF