MSM511000BL Search Results

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MSM5110 OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-w ord x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MSM5110OOB/BL_ 1,048,576-Word x 1-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MTC8108M38-xx2A1 -01 DRAM CARD DESCRIPTION The MTC8108M36-xx2Al-01 is a 8M-byte dynamic RAM card composed of 2M-word x 36-bit, being a 88-pin 2-piece type card proposed by the DRAM card guide-line of JEIDA. This provides a built-in buffer IC together with the DRAM device.