MSM5117800 Search Results

MSM5117800

Abstract: MSM5117800C
Contextual Info: E2G0112-18-42 O K I Semiconductor MSM5 1 17800 C This version: Apr. 1998 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power

Contextual Info: J2G0043-17-41 作成：1998年 1月 MSM5117800B l 前回作成：1997年 5月 ¡ 電子デバイス MSM5117800B 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5117800BはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

MSM5117800F

Abstract: MSM5117800
Contextual Info: FEDD5117800F-01 1Semiconductor MSM5117800F This version: January. 2001 Previous version :  2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor MSM5 1 17800B_ E 2 G 0043 - 17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800B achieves high integration, high-speed operation, and low-power

MSM5117800

Abstract: MSM5117800D
Contextual Info: Semiconductor This version:Apr.1999 MSM5117800D 2,097,152-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800D is a 2,097,152-word ´ 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117800D achieves high integration, high-speed operation, and low-power consumption

MSM5117800A

Abstract: MSM5117800
Contextual Info: O K I Semiconductor MSM5 1 17800A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800A achieves high integration, high-speed operation, and low-power

MAS 10 RCD

Abstract: M5117800-80 DDE013S MSM5117800
Contextual Info: O K I Semiconductor MSM5 1 17800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800 achieves high integration, high-speed operation, and low-power

MSM5117800C

Contextual Info: Pr E2G0112-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power

MSM5117800

Abstract: TSOP28-P-400
Contextual Info: O K I Semiconductor MSM5 1 17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.

Contextual Info: E2G0112-18-42 O K I Semiconductor MSM5 1 17800C 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power

MSM5117800

Abstract: MSM5117800A
Contextual Info: O K I Semiconductor MSM5117800A_ 2,097,152-W ord x 8 -B it D Y N A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM5117800A is a 2,097,152-w ord x 8-bildynarnic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5117800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a 2,097,152-w ord x 8-bit dynam ic RA M fabricated in OKI's C M O S silicon gate technology. The M SM 5117800 achieves high integration, high-speed operation, and low -pow er

msm5117800b

Abstract: MSM5117800
Contextual Info: O K I Semiconductor MSM5 1 17800B_ E 2 G 0 0 4 3 - 1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800B achieves high integration, high-speed operation, and low-power

M5M23160

Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Contextual Info: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1

Contextual Info: O K I Semiconductor MSM5117800A_ 2,097,152-Word x 8-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM5117800A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800A achieves high integration, high-speed operation, and low-power

Contextual Info: J2G0112-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5117800C l MSM5117800C 暫定 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5117800CはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

MSM5117800

Abstract: MSM5117800D
Contextual Info: 作成 ：1999 年 1 月 電子デバイス M SM 5117800D 2,097,152-Word x 8-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM5117800D はCMOS プロセス技術を用いた 2,097,152 ワードx8 ビット構成のダイナミックラ ンダムアクセスメモリです。4 層ポリシリコン 2 層メタルプロセスと、CMOS 回路の採用により、高

Contextual Info: O K I Semiconductor MSM5117800B_ E2G0043-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800B is a 2,097,152-w ord x 8-bit dynam ic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511780GB achieves high integration, high-speed operation, and low-power

Contextual Info: FJDD5117800F-01 1電子デバイス MSM5117800F 今回作成：2001 年 1 月 前回作成： 2,097,152-Wordx8-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM5117800F はCMOS プロセス技術を用いた 2,097,152 ワード×8 ビット構成のダイナミックラン

AN 17800

Contextual Info: O K I Semiconductor MSM5 1 17800 A_ 2,097,152-Word x 8-Bit DYN A M IC RAM : FAST PAG E M O DE TYPE DESCRIPTION The MSM5117800A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800A achieves high integration, high-speed operation, and low-power

MSM5117800

Abstract: MSM5117800C SOJ28
Contextual Info: J2G0112-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5117800C l MSM5117800C 暫定 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5117800CはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

MSM5117800F

Abstract: MSM5117800 PEDD5117800F-01
Contextual Info: PEDD5117800F-01 1Semiconductor MSM5117800F This version: May. 2000 Previous version :  Preliminary 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

MSM5117800

Abstract: MSM5117800C
Contextual Info: Pr E2G0112-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5117800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.