MSM51V17400 Search Results

msm51v17400d

Abstract: MSM51V17400 MSM51V17400DSL
Contextual Info: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

Contextual Info: IC INFORMATION Function D RAM C MOS Type J 1/1 E AVX-MG2027ZF/XN/UC MSM51V17400F6TFT Model VCC 1 26 VSS DQ1 2 25 DQ4 DQ2 3 24 DQ3 we 4 23 cas ras 5 A0 9 22 oe A0-A10 : Address input : Row address strobe ras 21 A9 : Column address strobe input cas DQ1-DQ4 : Data input / output

Contextual Info: PEDD51V17400F-01 1Semiconductor MSM51V17400F This version: May. 2000 Previous version :  Preliminary 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate

7400A

Abstract: MSM51V17400A
Contextual Info: O K I Semiconductor M SM 51V17400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17400A is

MSM51V17400F

Abstract: CA10 MSM51V17400 A21-1
Contextual Info: FEDD51V17400F-04 1Semiconductor MSM51V17400F This version: May 2001 Previous version : March 2001 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate

MSM51V17400F

Abstract: CA10 MSM51V17400
Contextual Info: FEDD51V17400F-02 1Semiconductor MSM51V17400F This version: January. 2001 Previous version : Oct. 2000 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: E2G0123-17-61 O K I Semiconductor This version: Mar. 1998 MSM51V17400D/DSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI7400D /DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

msm51v17400b

Abstract: MSM51V17400
Contextual Info: ¡ Semiconductor MSM51V17400B/BSL ¡ Semiconductor MSM51V17400B/BSL E2G0069-17-41 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400B/BSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400B/BSL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM51 VI 7400 B/BSL E2G0069-17-41 4,194,304-Word x 4-Bit D YN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTIO N The MSM51V17400B/BSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400B / BSL achieves high integration, high-speed operation, and

MSM51V17400D

Contextual Info: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

Contextual Info: J2G0069-17-41 作成：1998年 1月 MSM51V17400B/BSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM51V17400B/BSL 4,194,304-Wordx4-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V17400B/BSLはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックラ

Contextual Info: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.

MSM51V17400DSL

Abstract: A312H
Contextual Info: E2G0123-17-61 O K I Semiconductor M SM51V17400D/DSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI7400D /D SL is a 4,194,304-w ord x 4-bit dynam ic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

MSM51V17400

Contextual Info: O K I Semiconductor MSM5 1 V17 4 0 0 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the M SM 51VI7400 is OKI's CM OS silicon gate process technology.

M51V17400-60

Abstract: M51V17400 M51V17 MSM51V17400 be4s A10E M51V m51v174 HAT141
Contextual Info: O K I Semiconductor MSM5 1 V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.

Contextual Info: J2G0123-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V17400D/DSL l 暫定 MSM51V17400D/DSL 4,194,304-Wordx4-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V17400D/DSLはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックラ

Contextual Info: FEDD51V17400J-01 Issue Date: Mar. 31, 2011 MSM51V17400J 4,194,304-Word  4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400J is a 4,194,304-word  4-bit dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The MSM51V17400J achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM51 VI 7400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400A is a 4,194304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17400A achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon double metal CMOS. The MSM51V17400A is

MSM51V17400A

Contextual Info: O K I Semiconductor M SM 51V17400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17400A is

Contextual Info: O K I Semiconductor MSM51V17400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17400A is

Contextual Info: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.

Contextual Info: FEDD51V17400J-01 Issue Date: Mar. 31, 2011 MSM51V17400J 4,194,304-Word  4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400J is a 4,194,304-word  4-bit dynamic RAM fabricated in OKI SEMICONDUCTOR’s silicon-gate CMOS technology. The MSM51V17400J achieves high integration,

Contextual Info: FJDD51V17400F-04 1電子デバイス MSM51V17400F 今回作成：2001 年 5 月 前回作成：2001 年 3 月 4,194,304-Wordx4-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM51V17400F はCMOS プロセス技術を用いた 4,194,304 ワード×4 ビット構成のダイナミックラ

51V17400

Contextual Info: O K I Semiconductor MSM51V17400 4 Meg x 4-Blt DYNAMIC RAM DESCRIPTION The MSM51V7400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V7400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL