MT2BF400 Search Results

MT28F400B1

Abstract: MAX714
Contextual Info: PRELIMINARY |M |^ E S m V I MT28F004B1/MT28F400B1 ET 4 MEG FLASH MEMORY I FLASH MEMORY 4 MEG S m artV o ltag e, BOOT BLOCK, EXTENDED TEMPERATURE FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40° to +85° C • Seven erase blocks:

Contextual Info: ADVANCE I QUANTUM DEVICES INC FLASH MEMORY 256K x 16,512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB / 4K-word parameter blocks - Four general memory blocks • Low power 100(iA standby; 60mA active, MAX • 5V±10% read; 12V±5% write/erase

Contextual Info: PRELIMINARY MT28F400B1 256K x 16, 512K x 8 FLASH MEMORY MICRON M QUANTUM DEVICES, INC. FLASH MEMORY 256K x 16, 512K x 8 S martV oltage , BOOT BLOCK FEATURES • Seven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks

MT28F400B1

Abstract: MAX714
Contextual Info: PRELIMINARY MT28F004B1/MT28F400B1 ET 4 MEG FLASH MEMORY I^ IIC R O N FLASH MEMORY 4 MEG EXTENDED TEMPERATURE FEATURES PIN ASSIGNMENT Top View • Extended tem perature range operation: -40° to +85° C • Seven erase blocks: 16KB/8K-word boot block (protected)

28F400B1

Abstract: TS0P48
Contextual Info: PRELIMINARY MICRON MT28F400B1 256K x 16 512K x 8 F L A S H M EM O RY I FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View 44-Pin SOP • Sev en era se b lo ck s: 1 6 K B /8 K -w o rd b o o t blo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s

Contextual Info: PRELIMINARY M IC R O N 1 MT28F400 256K x 16, 512K x 8 FLASH MEMORY FLASH MEMORY 256K x 16, 512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB/4K-word parameter blocks - Four main memory blocks • 5V ±10% Vcc; 12V ±5% V pp