MT3S08T Search Results

MT3S08T

Contextual Info: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • · Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Maximum Ratings (Ta = 25°C) Characteristics

MT3S08T

Contextual Info: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • Sutable for use in an OSC • Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • • Unit: mm Suitable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Absolute Maximum Ratings (Ta = 25°C)

543e

Abstract: 014E 200E 800E MT3S08T
Contextual Info: MT3S08T SPICE parameters UCB SPICE2G6 20020724 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S08T 1 2 3 3 18 2.014E-02 9 19 2.014E-02 6 18 2.260E-10 6 19

Contextual Info: MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications • • Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB @1 V/5 mA/1 GHz Maximum Ratings (Ta = 25°C) Characteristics

MT3S06S

Abstract: MT3S06T MT3S08T MT6L54E
Contextual Info: MT6L54E Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No. Q1: SSM (TESM)

Contextual Info: MT6L56E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.

Contextual Info: MT6L54S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L54S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6

MT3S07S

Abstract: MT3S07T MT3S08T MT6L56S
Contextual Info: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6

MT3S06S

Abstract: MT3S06T MT3S08T MT6L54E
Contextual Info: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No.

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

Contextual Info: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No.

Contextual Info: MT6L56E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.

Contextual Info: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6

VHF-UHF Band oscillator

Abstract: MT3S06S MT3S06T MT3S08T MT6L54E
Contextual Info: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices are built in to the super-thin and ultra super mini 6 pin package: ES6 Q1: SSM (TESM)

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

MT3S06S

Abstract: MT3S06T MT3S08T MT6L54S
Contextual Info: MT6L54S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L54S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6

Contextual Info: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit : mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6 package.

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Contextual Info: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices are built in to the super-thin and ultra super mini 6 pin package: ES6 Q1: SSM (TESM)

Contextual Info: MT6L56E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit : mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製