MT4C16270D Search Results

BIOS 32 Pin PLCC

Abstract: DIP14 footprint JS29 EPM7032LCC44 aui isolation transformer diode js7 C3310 push button switch 2 pin BLM11P300S DRAM
Contextual Info: FEATURES: • Switched Ethernet Evaluation Board using one Galileo GT-48001A Switched Ethernet Controller • Provides switching between 8 10/20 Mbps Ethernet ports • Flexible uses - Standalone mode - Plug into PCI slot in a PC • 33MHz PCI Rev. 2.1 interface

Contextual Info: ED06DRAM TECHNOLOGY, INC. DRAM M T4C 16270 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: 256K x 16 EDO DRAM TECHNOLOGY, INC. MT4C16270 DRAM FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible

RD2 TP10

Abstract: L6244 J311 PDI 40 JS29 EPM7032 JS37 4.7k j33 TXD RXD R105
Contextual Info: A B C DData[31:0] DData[31:0] DAddr[8:0] DAddr[8:0] DAddr[8:0] RAS~[1:0] WE~ CAS~ ChipSel~ RAS~[1:0] WE~ CAS~ ChipSel~ RAS~[1:0] WE~ CAS~ ChipSel~ DData[31:0] 4 Int~ Req~ Serr~ IdSel DevSel~ Stop~ Par Perr~ Frame~ IRdy~ TRdy~ Gnt~ PCI CBE~[3:0] PRst~ PciClk

MT4C16270DJ-7

Contextual Info: MICRON I 256K TECHNOLOGY. INC DRAM MT4C16270 X 16 DRAM 2 5 6 K X 16 D R A M m 5V, EDO PAGE MODE o O FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*

MT4C16270DJ-7

Contextual Info: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C16270DJ-5

Abstract: MT4C16270
Contextual Info: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical

MT4C16270

Abstract: MT4C16270DJ-4
Contextual Info: OBSOLETE 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C16270DJ-4

Abstract: MT4C16270
Contextual Info: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical

CON20X2

Abstract: PROCOMM PLUS amd processor based Circuit Diagram appa A17 MT4C16270DJ-5 7705a notes on serial communication MAX232 led programming AM29F400 AMD S1 Pinout HLMP-7000
Contextual Info: frtbook : about Page vii Monday, June 2, 1997 11:53 AM About the SD186ED Demonstration Board The AMD SD186ED Demonstration Board was designed as an exceptionally small, low-cost product for demonstration of the AMD Am186 ED microcontroller. See page ix for a block diagram of the board.

MT4C16270DJ-7

Contextual Info: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical

Contextual Info: MT4C16270 256K X 16 DRAM MICRON I TECHNOLOGY. INC. 256K x 16 DRAM DRAM 5V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*

Contextual Info: 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

MT4D51232M-XX

Contextual Info: 256K, 512K x 32 DRAM SIMMs TECHNOLOGY, INC. MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32) • High-performance CMOS silicon-gate process

QL8X12B-XPL68C

Abstract: 80c96 1X3HDR PT3868 C458 R486 r946 MODJACK MT4C16270DJ-6 CR69
Contextual Info: A SWITCHED ETHERNET REFERENCE DESIGN SCHEMATICS Switched Ethernet Reference Design Description Order Number: 272907-001 July, 1996 Appendix A: Switched Ethernet Reference Design Schematics Index to Reference Design Schematics Circuit Sheets +3.3V Supply for Processor .3

Contextual Info: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)

Contextual Info: ADVANCE MT4C16270/1 256K X 16 WIDE DRAM |U |IC = R O N WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply

Contextual Info: 2 5 6 K X 16 EDO DRAM |uiic: r o n MT4C16270 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible

ATIC 39 b4

Abstract: SR0805 SC0805 resistor r336 r331 r322 r330 r1 RJ45X8 permittivity FR 4 R272 RJ45 8 land modular jack C144 3pin e s t PCI x16 footprint fingers
Contextual Info: PMC-Sierra, Inc. REFERENCE DESIGN PMC-970391 ISSUE 1 ADVANCE PM3350 ELAN 8x10 24-PORT 10 MBIT/S ETHERNET SWITCH PM3350 ELAN 8x10 24-Port Ethernet Switch Reference Design PROPRIETARY AND CONFIDENTIAL Released Issue 1: April, 1998 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

RAS 2415

Abstract: TC514265DJ mt4c16257dj TC514265DFT60 TMS44165DZ TMS45165DZ TC514265DFT-50 TC514260DFT70 HM514260 TC514260DJ
Contextual Info: E86 Family Bulletin DRAM Controller Specifications and Vendor Compatibility Introduction The Am186ED has a super set of the Am186ES features, including an integrated DRAM controller. This integration reduces overall system cost. The Am186ED is designed to be used with 4 Meg 256K x 16

Contextual Info: MT4C16270 256K x 16 DRAM MICRON I TECHNOLOGY, NIC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical

Contextual Info: ADVANCE WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply

Contextual Info: ADVANCE l^ iic n o N 256K WIDE DRAM X MT4C16270/1 16 WIDE DRAM 256K x 16 DRAM FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500mW active, typical

Contextual Info: |U |IC R O N MT4C16270 256KX 16 DRAM 2 5 6 K x 16 DRAM DRAM 5V, EDO PAGE MODE • Industry-standard x l6 pinouts, tim ing, functions and packages • High-performance CM O S silicon-gate process • Single +5V +10% pow er supply* • Low power, 3m W standby; 300m W active, typical