MT55L128V36F Search Results

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

MT58L512L18PS-7.5

Abstract: MT58L256L18D1T-10 MT58L256L32PF-10 MT55V512V36PT-7.5 GS8162Z36BB-200 GS816032BT-150 MT55L512Y36PF-7.5 MT55L256L36FT-10 MT58L256L36FS-10 MT58L64L32PT-7.5
Contextual Info: MICRON * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss MT55L128V32P1B-6 MT55L128V32P1B-7.5 MT55L128V32P1T-10 MT55L128V32P1T-6 MT55L128V32P1T-7.5 MT55L128V36F1B-10 MT55L128V36F1B-11 MT55L128V36F1B-12

micron sram

Abstract: MS-026 MT55L256L18FT-11
Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT SRAM 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • •

AL 2425 dv

Abstract: MS-026 MT55L128L32F1 MT55L128L36F1 MT55L128V32F1 MT55L128V36F1 MT55L256L18F1 MT55L256L18F1T-12 MT55L256V18F1
Contextual Info: PRELIM INARY MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 4M b ZBTMSRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single + 3 .3 V ±5% power supply V dd

Contextual Info: ADVANCE M I^ P n M 8 I 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • • • • H ig h frequency an d 100 p ercen t b u s utilization

MS-026

Abstract: MT55L128L32F1 MT55L128L36F1 MT55L128V32F1 MT55L128V36F1 MT55L256L18F1 MT55L256L18F1T-12 MT55L256V18F1
Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

GW 9n

Abstract: MS-026 MT55L128L32F1 MT55L128L36F1 MT55L128V32F1 MT55L128V36F1 MT55L256L18F1 MT55L256V18F1 TSOP 48 thermal resistance junction to case
Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

micron memory sram

Abstract: micron sram MS-026 MT55L128L32F1 MT55L128L36F1 MT55L128V32F1 MT55L128V36F1 MT55L256L18F1 MT55L256L18F1T-12 MT55L256V18F1
Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT‚ SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

6 T 3H

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • •

zbt sram 1994

Contextual Info: SRAM ADDENDUM Attention: Micron has discontinued its 119-pin BGA SRAM package. While we are currently working to update these data sheets, please note that this data sheet still shows the discontinued package. For further information please call 208-368-3900.

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC