MT6L58AFS Search Results

IC MARKING 1005 5 pin

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.

MT6L58AFS

Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S03AT (MT3S06FS) (MT3S03AFS) Maximum Ratings (Ta = 25°C) Characteristic

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製