MTP12N06EZL Search Results
MTP12N06EZL Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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MTP12N06EZL |
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TMOS E-FET High Energy Power FET | Original | 225.51KB | 8 | |||
MTP12N06EZL |
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N-Channel Enhancement-Mode Silicon Gate | Original | 112.1KB | 8 | |||
MTP12N06EZL/D |
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TMOS POWER FET 12 AMPERES 60 VOLTS | Original | 194.27KB | 8 | |||
MTP12N06EZL-D |
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TMOS E-FET High Energy Power FET N-Channel Enhance | Original | 225.51KB | 8 |
MTP12N06EZL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
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Original |
MTP12N06EZL/D MTP12N06EZL MTP12N06EZL/D* AN569 MTP12N06EZL mosfet transistor 400 volts.100 amperes | |
AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
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Original |
MTP12N06EZL/D MTP12N06EZL MTP12N06EZL/D* AN569 MTP12N06EZL mosfet transistor 400 volts.100 amperes | |
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP12N06EZL N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = °-180 OHM This advanced TMOS power FET is designed to withstand high |
OCR Scan |
MTP12N06EZL/D MTP12N06EZL 21A-06, | |
Contextual Info: MOTOROLA O rder this docum ent by M TP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP12N06EZL TMOS E -F E T ™ High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high |
OCR Scan |
TP12N06EZL/D TP12N06EZL MTP12N06EZL/D |