MUMBAI Search Results

lts542

Abstract: 7-segment display lts542 STR 6253 lts542 data sheet LTS542 7-segment display 7 segment display LTS542 main LTS542 str w 6253 LTS542 7 SEGMENT DISPLAY lts542 LED DISPLAY
Contextual Info: Electromechanical Timer Replacement 99 Minute Timer Author: Milind Hareshwar Patil Tata Institute Of Fundamental Research Mumbai, Maharastra India email: milindhp@tifrvax.tifr.res.in OVERVIEW This 99 minute timer replaces the electro-mechanical timer. The hardware is made simple and economical.

transistor equivalent book FOR D 1047

Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

RECTIFIER DIODE 1000A

Abstract: 2596
Contextual Info: Rectifier Diode SXXHN/HR300 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 300 A 471 A 5200 A 130.20 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS

relay my4n omron

Abstract: MY4I4N MY2I4N omron relay MY2-02 DECO RELAY omron relay my2 OMRON PYF08A relay my4n omron circuit connection OMRON MY3 relay my2n 220 v omron
Contextual Info: General-purpose Relay MY An Improved Miniature Power Relay with Many Models for Sequence Control and Power Applications ‡ A wide range of relay variations including ones with operation indicators, built-in diodes, etc. ‡ Arc barrier standard on 3- and 4-pole Relays.

Contextual Info: Tool and Appliance Tester Tool and Appliance Tester DESCRIPTION The Tool and Appliance Tester combines, in one portable instrument, the three most frequently specified electrical safety tests for tools and appliances. In conformance to UL and ANSI test requirements, the instrument performs test

BCF29

Abstract: BCF30 BCF32 BCF33 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification

Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1202TS Battery power unit Objective specification File under Integrated Circuits, IC03 2000 Jun 08 Philips Semiconductors Objective specification Battery power unit TEA1202TS FEATURES GENERAL DESCRIPTION • Fully integrated battery power unit, including complete

BD230

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD226; BD228; BD230 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 06 Philips Semiconductors Product specification NPN power transistors

ch-1228

Abstract: Car Central lock system VNH3SP30 l9813 st driver regulator automotive HiQUAD-64 temic can bus gateway car central lock HiQuad package VNH2SP30 window winder
Contextual Info: Door zone systems Advanced solutions for door zone applications www.st.com/automotive STMicroelectronics – advanced From engine and transmission control through safety and onboard entertainment, electronics and microelectronics are becoming increasingly important in all sectors of the automotive industry.

SSOP28

Abstract: UDA1340 UDA1340M 8LM32A07
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UDA1340 Low-voltage low-power stereo audio CODEC with DSP features Preliminary specification Supersedes data of 1997 May 20 File under Integrated Circuits, IC01 1997 Jul 09 Philips Semiconductors Preliminary specification Low-voltage low-power stereo audio

Q67037-A1034P

Abstract: TUA6100
Contextual Info: Product Brief TUA 6100 Direct Conversion IC for Digital QPSK Satellite Signals TUA 6100 The TUA 6100 direct down conversion IC in BICMOS technology combines bipolar analogue functions with a CMOS-PLL on one chip. This integration reduces external discrete components

2596

Contextual Info: Rectifier Diode SXXHN/HR860 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-2000 50 V mA 860 A 1350 A 16000 A 1280 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS

H175TB

Abstract: H175TBXX 1200V 100 A THYRISTOR HIND THYRISTOR thyristor phase control rectifier 2596 Hirect rs 450 l 850C
Contextual Info: PHASE CONTROL THYRISTOR H175TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1800 V 125 200-1800 V 125 125 50 50 mA mA 175 A 275 A 4.60 kA 106 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

HR-6

Abstract: rectifier diode 2596 Hirect Hirect diode "RECTIFIER DIODE"
Contextual Info: Rectifier Diode SXXHN/HR6 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 2 V mA 6 A 9.5 A 200 A 200 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)

HIND RECTIFIER

Abstract: Hirect "RECTIFIER DIODE" RECTIFIER DIODE 2596 1000C Hirect diode HR550 MA550A
Contextual Info: Rectifier Diode SXXHN/HR550 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 160 160 200-1800 40 V mA 550 A 865 A 12500 A 781 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS

Hirect

Abstract: Hirect diode hirect DIODE hr41 HIND RECTIFIER RECTIFIER DIODE HR41 2596 Hind Rectifiers HR41 63A-500 HIND RECTIFIER DIODE
Contextual Info: Rectifier Diode SXXHN/HR41 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 4 V mA 40 A 63 A 500 A 1250 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)

Hirect

Abstract: H505CHXX 1200V 100 A THYRISTOR thyristor phase control rectifier thyristor control circuit 650C Phase Control Thyristor thyristor vrrm 1800
Contextual Info: PHASE CONTROL THYRISTOR H505CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 50 50 mA mA 505 A 800 A 6.50 kA 211 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

SHXXC450

Abstract: 2596 Hirect diode
Contextual Info: Capsule Type Rectifier Diode SHXXC450 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 170 170 200-1800 20 V mA 450 A 700 A 4900 A 120 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS

HR14

Abstract: 2596 Hirect diode Hirect HIND RECTIFIER rectifier diode
Contextual Info: Rectifier Diode SXXHN/HR14 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 2 V mA 12 A 19 A 250 A 310 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)

H45TB

Abstract: H45TBXX Hirect thyristor phase control rectifier 850C S2525 3200A2s
Contextual Info: PHASE CONTROL THYRISTOR H45TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 125 10 10 600 mA mA V/ S 45 A 70 A 800 A 3200 A 2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage

RECTIFIER DIODE 1000A

Abstract: HRS320 HIND RECTIFIER 2596
Contextual Info: Rectifier Diode SXXHNS/HRS320 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 30 V mA 320 A 500 A 6550 A 214.50 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS

"RECTIFIER DIODE"

Abstract: rectifier diode 2596 HIND RECTIFIER HFR400 A628A Hirect diode
Contextual Info: Rectifier Diode SXXHFN/HFR400 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 400 A 628 A 7000 A 245 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS

2596

Abstract: Hind Rectifiers Hirect thyristor control circuit thyristor phase control rectifier 1800V 2000 A THYRISTOR specification of reverse conducting thyristor thyristor control thyristor DATASHEET 1000 A 1000 v thyristor
Contextual Info: PHASE CONTROL THYRISTOR H1800CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-2000 V 125 200-2000 V 125 125 150 150 mA mA 1800 A 2830 A 24 kA 2880 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

H350TBXX

Abstract: H350TB thyristor phase control rectifier specification of reverse conducting thyristor 850C Hirect
Contextual Info: PHASE CONTROL THYRISTOR H350TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 80 80 mA mA 350 A 550 A 8 kA 320 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage