MV20 Search Results

MV205

Abstract: 130-B MV206
Contextual Info: MV205 MV206 SILICON vvc -WhSILICON HYPER-ABRUPT T U N IN G VO LTAG E VA R IA BLE CAPACITANCE DIODES DIODES . . . designed for microwave tuning applications where m inim um package parasitics are required. • High Guaranteed Q €> 100 M H z Q = 2 2 5 (M in) - M V 2 0 5

MV109

Abstract: BB105 MV2104 MV104G MV1662 MV1662-2 BB105A MV1404 MV2102 MV2114
Contextual Info: FM Radio Abrupt and TV Hyper-Abrupt Tuning . . . designed fo r use in V H F and U H F tuners and FM radio, providing solid-state reliability in replacement o f mechanical tuning methods. A /" Device Type BB105B BB105G BB105A MV104 MV104G MV109 MV209 MV1401

CR SOT-23

Abstract: MMBV109LT1 DIODE M4A marking C3 sot-23 MBV109T1 MMBV109L MV209 SMD310
Contextual Info: MOTOROLA Order this document by MBV109T1/D SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1 * MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods.

EP1014

Abstract: EP1014-1038 MV20S EP1024
Contextual Info: HYPERABRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES S ER IE S M V20S MV206 LP1 01 4-1 0 3 8 EP1014-1038 LOW IN D U C TA N C E designed for electronic tuning and control applications in the U H F and lower microwave frequency ranges. P LA N A R C O N ST R U C T IO N

Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features High Q Values for Higher Frequency Performance Constant Gamma Design Low Reverse Current Available as Chip or Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available

MV209

Abstract: MV209 diode MMBV109LT1 SMD310 MMBV109LT1 marking
Contextual Info: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

Matrix keyboard key code

Abstract: CQY99 MV2000 cqy99 led keyboard matrix 8 x 18 keyboard matrix CQY99 2,7 v
Contextual Info: PLESSEY 1SE S E M IC O N D U C T O R S 7220513 D Q 0 0 em 3 b PLESSEY Sem iconductors. T-~ n - I I MV2000 REMOTE KEYBOARD TRANSMITTER OUTPUT / [ 111 [ 2 no C 3 100 [ 5 < ✓ OUTPUTS 8 2000 000 t 9 0000 [ 10 I 0001 C CO LU M N MV 010 [ 7 001 [ 11 < 1 0010 [ 12

IC 74373 ram 8 byte

Abstract: tcon 102 ic 74373 datasheet IC 74373 Tcon 8.9 f specifications of 74373 latch ic 27C512-60 tcon 17 20LSOP kb 3910
Contextual Info: MOSEL VITELIC INC. MV20556 Preliminary July 1997 8 - Bit MCU Mouse Controller Features General 8051 instruction family compatible Operate at voltage 5.0V. No External Memory is supported 8 bit bus I/O ports 4 K byte ROM 128 byte RAM 128 byte depth stack Two 16 bit Timers Event Counters

MBV109T1

Abstract: MMBV109L MMBV109LT1 MV209 SMD310
Contextual Info: MOTOROLA Order this document by MBV109T1/D SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1 * MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods.

Contextual Info: MV209 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.29p C1/C2 Min. Capacitance Ratio5.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)280m Semiconductor MaterialSilicon Package StyleBR-3w

MV21005

Abstract: gaas varactor diodes Tuning Varactors MV20000
Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features ● High Q Values for Higher Frequency Performance ● Constant Gamma Design ● Low Reverse Current ● Available as Chip or Packaged Diodes ● Available in Chip-on-Board Packaging ●

MV209 equivalent

Abstract: DIODE CQ 521 MV209 MV209 diode tcc 300
Contextual Info: MV209 SILICON W C VO LTAGE VA R IA BLE CAPACITANCE DIODE SILICO N EPICAP DIODE 2 6 - 3 2 pF . . . designed fo r V H F T V tuning, A F C , general frequency control and tuning applications; providing solid-state reliability in replace­ ment o f mechanical tuning methods.

DIODE M4A

Abstract: j4a diode C25F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esign ed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferrod Devices

Contextual Info: MMBV109LT1* MV209* SILICON EPICAP DIODES . . . designed for general frequency control and tuning applications; provid­ ing solid-state reliability in replacement of m echanical tuning methods. CASE 318-07, STYLE 8 SOT-23 TO-236AB • High Q with Guaranteed Minimum Values at VHF Frequencies

2n3019 replacement

Abstract: BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. * Motorola Preferred Devices

MV209 diode

Abstract: DIODE M4A MV209 MV209 equivalent MBV109T1 MMBV109 MMBV109L MMBV109LT1 j4a diode MV-209
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMBV109LT1 MBV109T1 MV209 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

MV209 diode

Abstract: marking C3 sot-23 MV209 C25 diode CR SOT-23 ansi y14.5m-1982 DIODE M4A j4a diode MBV109T1 MMBV109L
Contextual Info: MOTOROLA Order this document by MBV109T1/D SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods.

DIODE M4A

Abstract: M4A sot23
Contextual Info: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

M4A sot23

Abstract: DIODE M4A MV209 MV209 diode marking code m4a
Contextual Info: MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies

gaas varactor diodes

Abstract: MV2101 MV21004 MV20001
Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features ● High Q Values for Higher Frequency Performance ● Constant Gamma Design ● Low Reverse Current ● Available as Chip or Packaged Diodes ● Available in Chip-on-Board Packaging ●

MA342-M

Abstract: MA344 MA348 MA353 MA360 MA363 MA365 MA366 MA368
Contextual Info: - 198- m s tt £ MA 342 —M fôT MA344 fêT MA3 48 MA353 fôT MA360 tëT fâT MA363 MA365 fôT MA366 tôT MA367 tôT MA368 fôT MA370 fôT MA371 fôT MA372 «T MA840 «T MV201 ND3Q48-3D BS m ^ rm m f t * S fe Ct, C j * pF p Vrm Vr (mW) (V) (V) min typ AFC

MA344

Abstract: ma840 MA342-M MA348 MA353 MA360 MA363 MA365 MA366 MA368
Contextual Info: - 198- m s tt £ MA 342 —M fôT MA344 fêT MA3 48 MA353 fôT MA360 tëT fâT MA363 MA365 fôT MA366 tôT MA367 tôT MA368 fôT MA370 fôT MA371 fôT MA372 «T MA840 «T MV201 ND3Q48-3D BS m ^ rm m f t * S fe Ct, C j * pF p Vrm Vr (mW) (V) (V) min typ AFC

MV209 diode

Contextual Info: Silicon Epicap Diode MMBV109LT1 MBV109T1 MV209 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio

MMBV109

Abstract: MV209
Contextual Info: MOTOROLA Order this document by MBV109T1/D SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1 * MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods.