MW10120196 Search Results
MW10120196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C) |
OCR Scan |
JS8853-AS 18GHz 15GHz MW10120196 |