MW40020196 Search Results
MW40020196 Datasheets Context Search
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Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C) |
OCR Scan |
TPM1818-30 2-16G1B) MW40020196 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 1.8 GHz • High gain - G-idB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C) |
OCR Scan |
TPM1818-30 2-16G1B) MW40020196 | |
TPM1818-30Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 1.8 GHz • High gain - G1dB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C) |
Original |
TPM1818-30 CharactTPM1818-30 2-16G1B) MW40020196 TPM1818-30 | |
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Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 • High gain dBm at 1.8 GHz - G 1dB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package Unit Min. Typ. Max dBm |
OCR Scan |
TPM1818-30 2-16G1B) MW40020196 |