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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package |
OCR Scan |
TIM1415-2 MW50390196 | |
TIM1415-2Contextual Info: TOSHIBA TIM1415-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package |
Original |
TIM1415-2 MW50390196 TIM1415-2 |