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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs C-Band Features • High power - Pi(jB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - GldB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM5359-4 MW50650196 TIM5359-4 1D172S0 | |
TIM5359-4Contextual Info: TOSHIBA TIM5359-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package |
Original |
TIM5359-4 2-11D1B) MW50650196 TIM5359-4 |