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    MXIC SEQUENTIAL Search Results

    MXIC SEQUENTIAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    72T6360L7-5BBI Renesas Electronics Corporation x36 Sequential Flow-Control Device (up to 1GigaBit) Visit Renesas Electronics Corporation
    72T6360L6BB Renesas Electronics Corporation x36 Sequential Flow-Control Device (up to 1GigaBit) Visit Renesas Electronics Corporation
    72T6360L6BBG Renesas Electronics Corporation x36 Sequential Flow-Control Device (up to 1GigaBit) Visit Renesas Electronics Corporation
    72T6360L7-5BB Renesas Electronics Corporation x36 Sequential Flow-Control Device (up to 1GigaBit) Visit Renesas Electronics Corporation
    LM3549SQX/NOPB Texas Instruments High Power Sequential LED Driver 24-WQFN -30 to 85 Visit Texas Instruments Buy

    MXIC SEQUENTIAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Electrolytic Capacitors Quality flowchart

    Abstract: 2N440 MX26C1000B MX26C2000B MX26C4000B 4000B
    Text: MACRONIX INTERNATIONAL Co., LTD. Page: 1 Taipei Office: 12F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886 02-25093300 Fax: (886) 02-25092200 Modem: (886) 02-25045679 In-System Programming of MXIC’s MTP MX26C1000B/2000B/4000B The MX26C1000B, MX26C2000B and MX26C4000B, 1Mb, 2Mb and 4Mb MTP ROM


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    PDF MX26C1000B/2000B/4000B MX26C1000B, MX26C2000B MX26C4000B, MX26C1000B/2000B/4000B Electrolytic Capacitors Quality flowchart 2N440 MX26C1000B MX26C4000B 4000B

    mxic 29lv160

    Abstract: 29lv160 Flash 29LV160 MX29LV160 29lv intel 28f160 28F160C3 FBGA48 amd Block Lock Bit amd Block Lock Bit Reset
    Text: Macronix International Co., Ltd. Taipei Office: 12F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886-2-25093300 Fax: 886-2-25092200 Subject: Shorten the engineer’s efforts for designing in MX29LW160T/B and MX29LV160 instead of Intel 28F160B3/C3 and AMD Am29LV160.


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    PDF MX29LW160T/B MX29LV160 28F160B3/C3 Am29LV160 MX29LW160 MX29LV160T/B Am29LV160DT/B 28F160C3 1Mx16 2Mx8/1Mx16 mxic 29lv160 29lv160 Flash 29LV160 29lv intel 28f160 28F160C3 FBGA48 amd Block Lock Bit amd Block Lock Bit Reset

    MX25L1605

    Abstract: MX25L1605M MX25L6405 MX25L1605MC PM1168 C214P IN3064 MX25L3205
    Text: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure


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    PDF MX25L1605 16M-BIT 100mA MX25L1605 MX25L1605M MX25L6405 MX25L1605MC PM1168 C214P IN3064 MX25L3205

    BP200

    Abstract: MXIC serial Flash MX25L1605 ad20bit4 25L1605
    Text: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure


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    PDF MX25L1605 16M-BIT BP200 MXIC serial Flash MX25L1605 ad20bit4 25L1605

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    Abstract: No abstract text available
    Text: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure


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    PDF MX25L1605 16M-BIT 100mA fi6/2006 JUN/08/2006

    MX25L1605ZM

    Abstract: 25l1605 8x6mm MX25L1605 IN3064 256-Byte
    Text: MX25L1605ZM Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure


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    PDF MX25L1605ZM 16M-BIT 100mA PM1291 MX25L1605ZM 25l1605 8x6mm MX25L1605 IN3064 256-Byte

    MXIC sequential

    Abstract: No abstract text available
    Text: MX25L3205 Macronix NBit TM Memory Family FEATURES 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure


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    PDF MX25L3205 32M-BIT 100mA JUN/12/2006 MXIC sequential

    flash TYPE mx25l3205A

    Abstract: No abstract text available
    Text: MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure


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    PDF MX25L3205A 32M-BIT 100mA f/2005 JUN/08/2006 flash TYPE mx25l3205A

    MX25L3205A

    Abstract: 3205a MX25L3205AMI-20 mx25l3205amc-20g MX25L3205 IN3064 flash TYPE mx25l3205A
    Text: MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure


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    PDF MX25L3205A 32M-BIT 100mA MX25L3205A 3205a MX25L3205AMI-20 mx25l3205amc-20g MX25L3205 IN3064 flash TYPE mx25l3205A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure


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    PDF MX25L3205A 32M-BIT 100mA 50MHz 256-byte 64K-byte 64s/chip PM1243

    25L3205

    Abstract: MX25L3205 MX25L6405 8096 instruction set ad8b IN3064 MX25L3205MC-20 MX25L1605 MX25L3205MI-20
    Text: MX25L3205 Macronix NBit TM Memory Family FEATURES 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure


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    PDF MX25L3205 32M-BIT 100mA JUL/15/2005 25L3205 MX25L3205 MX25L6405 8096 instruction set ad8b IN3064 MX25L3205MC-20 MX25L1605 MX25L3205MI-20

    Untitled

    Abstract: No abstract text available
    Text: MX25L1605 Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure


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    PDF MX25L1605 16M-BIT 100mA MAY/16/2006

    MXIC serial Flash

    Abstract: No abstract text available
    Text: MX25L3205A Macronix NBit TM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 33,554,432 x 1 bit structure


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    PDF MX25L3205A 32M-BIT 100mA 50MHz 256-byte 64K-byte 64s/chip MXIC serial Flash

    25L6405

    Abstract: MX25L6405
    Text: MX25L6405 Macronix NBit TM Memory Family FEATURES 64M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 67,108,864 x 1 bit structure • 128 Equal Sectors with 64K byte each - Any sector can be erased


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    PDF MX25L6405 64M-BIT JUL/15/2005 AUG/03/2005 PM1107 25L6405 MX25L6405

    Untitled

    Abstract: No abstract text available
    Text: MXIC M X29L8000T/ B 8 M-BIT [1 M X 8 ] CMOS VOLTAGE 3 V ONLY FLASH EEPROM S IN G L I FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation


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    PDF X29L8000T/ 40-Lead -100mA 100mA 16K-block

    Untitled

    Abstract: No abstract text available
    Text: MX23C6411 MXIC 64M-Bit Mask ROM 8/16 Bit Output ORDER INFORMATION FEATURES • Bit organization 4M x 16 (word mode) • Fast access time Part No. Access Time Page Access Time Package M X23C6411MC-12 120ns 50ns 44 pin SOP M X23C6411TC-12 120ns 50ns 48 pin TSOP


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    PDF MX23C6411 64M-Bit X23C6411MC-12 120ns X23C6411TC-12 MX23C6411RC-12 100mA

    Untitled

    Abstract: No abstract text available
    Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture


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    PDF MX29F1610 120/150ns 150ms Int03/11/1998 44-PIN 48-PIN

    Untitled

    Abstract: No abstract text available
    Text: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture


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    PDF 70/90/120ns MX29F1610A/ 44-PIN 48-PIN

    26C1024

    Abstract: No abstract text available
    Text: M S IC M X26 C 10 24A 1 M-BIT 6 4 K x 1 6 CMOS MULTIPLE-TIME-PROGRAMMABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% p rog ram/e rase voltage Fast access time: 70/90/100/120 ns


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    PDF 16-bit 10OjaA 44-pin 40-pin l-847-963-1909 26C1024

    Untitled

    Abstract: No abstract text available
    Text: IW DCIC FEATURES MX29F1 61 1 16M -BIT[2M x 8 /1 M x 1 61 CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JED EC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns


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    PDF 100/120/150ns 50/60/70ns 150ms MX29F1 44-PIN MX29F161

    X29L8000

    Abstract: No abstract text available
    Text: IW DCIC M X 29L8000T/B 8M-BIT [1 M x S] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation


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    PDF 120ns 16K-block) 16K-block 50ms00. MX29L8000T/B X29L8000

    A1T TRANSISTOR

    Abstract: No abstract text available
    Text: IMDCIC MX29F81OO 8M -BITI1 M x 8 /5 1 2K x 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V +10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture


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    PDF 100/120/150ns MX29F81OO MXS9F81OO -100mA 100mA 100ns A1T TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: ^ E O M O i/^ Y MX26C1024A 1 M -BIT 64 K X 1 6 CM OS M ULTIPLE-TIM E-PROGRAM M ABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% program/erase voltage


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    PDF MX26C1024A 16-bit 44-pin 40-pin MX26C1 PM0457

    00F1H

    Abstract: No abstract text available
    Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


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    PDF MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H