MXXXXX Search Results

SOJ-400

Contextual Info: EDO/FP DIMM/SODIMM Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. PCB Revision 0 : None 2 : 2nd Rev. 4 : 4th Rev. 1. Memory Module M 2. Module Configuration 3 : DIMM 4 : 8 Byte SODIMM 1 : 1st Rev. 3 : 3rd Rev. 13. "─"

PC100

Abstract: pc133 SDRAM DIMM package 128MB
Contextual Info: SDRAM Module Code Information Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 5 4 6 7 1. Memory Module M 2. Module Configuration 3 : 4/8 Byte DIMM (100, 168, 200, 232, 278pin) 4 : 8 Byte SODIMM (144pin) 3~4. Data bits 23 : x144/ECC PLL+Register DIMM

SGRAM

Abstract: 17-18 g
Contextual Info: SGRAM Module Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module M 12. PCB Revision & Type 0 : None 2. Module Configuration 8 : 4 Byte AIMM (132pin) 13. "─" 3~4. Data bits 32 : x32 AIMM w/o SPD 14. Power C : Normal, Self Ref.

Contextual Info: RTX-MxxxxxxUM Series Page 1 of 4 … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … . Specification of Return Transmitter Module for Optical Node RTX-MxxxxxxUM Series

54-WBGA

Abstract: 711Mbps
Contextual Info: RDRAM Module Code Information 1/2 Last Updated : February 2009 MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module(M) 10. Component Generation M : M-die 2. Module Configuration D : 32 bit RIMM (232pin) A : A-die B : B-die

SOJ-400

Contextual Info: EDO/FP SIMM Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module M 11. Package J : SOJ-400(Gold Tab) 2. Module Configuration 5 : SIMM 12. PCB Revision 0 : None 3~4. Data bits 32 : x32 bit 13. "─" 5. Vcc, Mode1, Mode2

Contextual Info: Alle Hechte Vorbehalten/ ill rights resemi 1 2 3 I A k 5 6 M3x10 è H mxxxxxx ,_|-OO M :— — El 1 y 2 1 , 5 36 , 5 Oiiensions in m " t - Z I V C p ' Original Size DIN » 4 1- - - - - - * Nicht tolerierte Hafe/Free size Menaces Techn. Character. Dat.

Contextual Info: mxxxxxxxxxmoooooooocxxxvr Tx - SERIALIZER ÇN CO Rx - DESERIALIZER < C D C M r O ' v j - L o c Dr ^ o o c n o T - c M c o o 0Û Û0! a5! a5! a5! a5! a5! a5! a5! a5! a9! a^! a2! a27 N*

240pin dimm socket

Abstract: udimm udimm 240pin DIMM 276-pin 294pin PC2700 184-Pin samsung 512mb ddr cl3 dimm
Contextual Info: DDR SDRAM Module Code Information 1/2 Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 1. Memory Module(M) 9 10 11 12 13 14 15 16 17 18 5. Feature, Voltage L : DDR SDRAM, 2.5V 2. Module Configuration 3 : 4/8 Byte DIMM 4 : 4/8 Byte SODIMM 3~4. Data bit

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

EIA-481-B

Contextual Info: MTDS Series – 5 x 7 Ceramic SMD TCXO ¾ Low Profile SMD TCXO ¾ Clipped Sinewave Output ¾ RoHS Compliant ¾ Low Power Consumption ELECTRICAL SPECIFICATIONS: Frequency Range Frequency Stability vs Temperature * Operating Temperature Range Storage Temperature Range

SBR CODEC

Abstract: speaker with screen LQFP48 LQFP64 LQFP80 PR3000 UCB1100 capacitive multi touch delta sigma a d conversion technique overview circuit diagram of ADC connection to pic
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UCB1100 Advanced modem/audio analog front-end Preliminary specification File under Integrated Circuits, <Handbook> 1997 Apr 11 Philips Semiconductors Preliminary specification Advanced modem/audio analog front-end UCB1100 FEATURES

LXXXXXXXX

Abstract: TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V
Contextual Info: «oaHaoooiMMMWfMMMMMM!9:^ v’*'» -• -■ -■ -^ jjÉBT *¿f5’00“’ '*'^ 7“T ■ ■ ■ ■ <1; .r {• o CY7C09569V CY7C09579V PRELIMINARY f:,ò b 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM • 3.3V Low o p e ratin g p ow er

a00u

Abstract: Z32100 STK 411 230 WE32100 ALI m7 101b BUX 707 z32101 Z32103 BUDA lo4p
Contextual Info: Y " P ro d u ct S pecification January 1987 Z32103 D R A M C O N TR O LLER DESCRIPTION T he Z32103 D R A M Controller provides address multiplexing, access and cycle time management, and refresh control for dynam ic random access m emory DRAM . It provides, in a single chip,

Contextual Info: MB03N65D0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB03N65D is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter

Si502

Contextual Info: Si501/2/3 3 2 K H Z –100 MH Z CMEMS  オ シ レ ー タ 機能          広い周波数範囲：32 kHz~100 MHz  周波数が 100 MHz 以上の場合は Silicon Labs にお問い合わせくだ   さい。

EIA-481-B

Contextual Info: MTTB Series – 5 X 3.2 Ceramic SMD VCTCXO  Low Profile SMD Device  Hermetically Sealed  Tight Stability Over Temperature  Low Power Consumption Frequency Range Frequency Stability vs Temperature* Operating Temperature Range Storage Temperature Range

EIA-481-B

Contextual Info: H Series Crystal  3.5mm x 6 mm x1.2mm Ceramic Package  Tight Tolerance and Stability  Wide Frequency Range  Tape and Reel Packaging Available Frequency Range 8.000MHZ to 100.000MHZ Frequency Tolerance / Stability See Part Number Guide for Options

Contextual Info: !» GEC P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION SEMICONDUCTORS DS3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY S u p e rs e d e s F e b ru a ry 1 9 9 2 ed itio n The P1480 LAN CAM is a 1K X 64-bit fixed-widlh CMOS Content-addressable Memory (CAM aimed at address

Contextual Info: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

toshiba S-AU

Abstract: TC5165805
Contextual Info: TO SHIBA THM73V1635ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 73V1635ATG is a 16,777,216-word by 72-bit dynam ic R A M module consisting of 18 T C 5164405A F T D R A M s on a printed circu it board. This module is optimized for applications w hich

Contextual Info: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: MAH Series 14 Pin DIP Oscillator  Industry Standard Package  RoHS Compliant Available  HCMOS Output  Wide Frequency Range Frequency Range Frequency Stability Inclusive of Temperature, Load, Voltage and Aging Operating Temperature

LD113

Contextual Info: Advance Data Sheet October 1998 microelectronics group Lucent Technologies Bell Labs Innovations Ambassador T8100A, T8102, and T8105 H.100/H.110 Interfaces and Time-Slot Interchangers 1 Product Overview • Two independently programmable groups of up to