N 410 TRANSISTOR Search Results

TRANSISTOR T 410

Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Contextual Info: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

BF410C

Abstract: a5175
Contextual Info: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

071 0039

Abstract: ngb15n41 NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

NGB15N41CLT4

Abstract: NGD15N41CL NGD15N41CLT4 NGP15N41CL
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41CLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

ignition IGBT

Abstract: ngb15n41 aac marking NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41G

Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41CLG

Abstract: 15N41CLG transistor 15N41G 15n41 NGP15N41CLG NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41cLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4
Contextual Info: NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

7420A

Abstract: 7.5b 35 2N5840 2N5839
Contextual Info: File Number 410 2N5838, 2N5839, 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • M aximum safe-area-of-operation curves m Low saturation voltages

TA7420

Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
Contextual Info: 3875081 G E SOLID STATECI DE | 3 û 7 S D f l l 0017172 I D 7^77 High-Voltage Power Transistors _ 2N5838, 2N5839, 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors

TA7420

Abstract: 2N5840 2N5839
Contextual Info: HARRIS. SEfllCOND S E CT OR File Number SbE D 4302271 00404Ô1 Ô23 « H A S 2N5838, 2N5839, 2N5840 m 410 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Feature*:

NGP15N41CL

Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

NGD15N41CL-D

Abstract: NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

Contextual Info: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm 2.1±0.1 Ron = 410 mΩ max (@VGS = 4V) Characteristic Symbol Rating Unit Drain–source voltage

8002B

Abstract: SSM3K107TU
Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm 2.1±0.1 Ron = 410 mΩ max (@VGS = 4V) Characteristic Drain–source voltage Rating Unit VDS

MGB15N40CL

Abstract: MGB15N40CLT4 MGP15N40CL G15N40
Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

SSM3K107TU

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage

G15N40

Abstract: MGB15N40CL MGB15N40CLT4 MGP15N40CL 440VDC
Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

SSM3K107TU

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage

SSM3K107TU

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage

5N40CL

Abstract: G15N40CLG MGB15N40CL MGP15N40CL G15N40
Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses