N 415 MOSFET Search Results

Contextual Info: CALEX M A N U F A C T U R I N G CO SEE D • lailgSO CG0111S 4« «CEX 3 Watt Single Output DC/DC Converters _ 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FAX: (415)932-6017 FEATURES '" p 5 * 7 -I I • Low Profile Copper Case (0.375" High)

INPUT 24VDC CHOPPER 12VDC OUTPUT

Abstract: 24S12 24S15 TRANSFORMER LC 3120 0111 5 Calex T5771
Contextual Info: CALEX M A N U F A C T U R I N G CO S2E 1> • 1811SS D 00 01 11 6 4M3 B C E X 3 Watt Single Output DC/DC Converters _ 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FEATURES FAX: (415)932-6017 C d c '" P ^ 7 ~

CA 3080 E

Abstract: 12D12.250 DDD1143 d 4464 c Calex calex model 160 12D15.200
Contextual Info: CALEX M A N U FA CT UR IN G CO 52E D • 101125 0 0G 011 M2 7b2 ICEX 6 Watt Dual Output DC/DC Converters 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FAX: (415)932-6017 FEATURES " P S '? - \ I • Low Profile C opper Case (0.375" High)

ALD1101A

Abstract: ALD1101 ALD1101B ALD1102 mosfet Vgs 10mV
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: 408 747-1155 Fax: (408) 747-1286 http://www.aldinc.com GENERAL DESCRIPTION

CPC5621A

Abstract: CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet
Contextual Info: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance

Contextual Info: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)

b0742

Abstract: *b0742 cpc5603
Contextual Info: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)

MOS FET SOT-223

Abstract: MOS FET SOT-223 ON depletion MOSFET CPC5603C CPC5603CTR CPC5620A CPC5621A CPC5622A depletion mode power mosfet
Contextual Info: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance

CPC5603CTR

Abstract: CPC5603C CPC5620A CPC5621A CPC5622A Depletion MOSFET 20V Depletion
Contextual Info: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C

Contextual Info: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V Ω Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8Ω (Typical) @ 25°C

Contextual Info: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C

FDG6332C_F085

Abstract: ssot-6 12V DC-DC inverter application note FDG6332C SC70-6
Contextual Info: FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features • Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

Contextual Info: FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features • Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

smd M21

Abstract: M21 SMD SMD H21 91543 7224u JANTX2N
Contextual Info: International IOR Rectifier Government and Spa.ce Products •d Part Number Bvo$s V R0S{on) IQ Tr=25°C Pd T (A) I00°C @ T r = 25°C (W) (A) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs S M D -] N-Channel IR F N 0 4 4 60

Contextual Info: Complementary MOSFET ELM17600GA-S •General Description ■Features ELM17600GA-S uses advanced trench technology to provide excellent Rds on a n d l o w g a t e c h a rg e . I n t e r n a l E S D protection is included. • • • • • N-channel P-channel

FDG6332C

Abstract: SSOP6 SC70-6
Contextual Info: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

FDC6332C

Abstract: FDG6332C SC70-6
Contextual Info: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

Contextual Info: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

FDG6332C

Abstract: SC70-6
Contextual Info: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

Contextual Info: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

75N60C

Contextual Info: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C

复合

Abstract: ELM17600GA
Contextual Info: 复合沟道 MOSFET ELM17600GA-S •概要 ■特点 ELM17600GA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=20V P 沟道 ·Vds=-20V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=0.9A Vgs=4.5V

Contextual Info: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

Marking Code m sc70-6

Abstract: CBVK741B019 F63TNR FDG6302P FDG6306P SC70-6
Contextual Info: FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate