N CHANNEL 20V D-S 3.9A Search Results

Contextual Info: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

N mosfet sot-23

Abstract: sot-23 MARKING CODE 23A marking sot-23
Contextual Info: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

NTE2945

Contextual Info: NTE2945 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability

3f381

Abstract: zxmhc3f381n8 ZXMHC3F381N8TC
Contextual Info: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V

3f381

Contextual Info: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V

3f381

Abstract: ZXMHC3F381N8TC ZXMHC3F381N8 1000T
Contextual Info: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V

Contextual Info: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS -40V Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V -3.9A 450mΩ @ VGS= -6.0V -3.4A -100V • Fast switching speed • Low gate drive

zxmp 17

Abstract: ZXMP 10A17 10A17 ZXMP10A17K 4.5V TO 100V INPUT REGULATOR
Contextual Info: A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V -3.9A 450mΩ @ VGS= -6.0V

Contextual Info: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated

SSD2021

Abstract: PN channel MOSFET 10A
Contextual Info: SSD2021 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability

Contextual Info: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 33mΩ @ VGS = -10V -6A 50mΩ @ VGS = -4.5V -4.9A • • • • • • • -40V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

Contextual Info: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS -40V Features Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

APM9928

Abstract: P-Channel MOSFET code L 1A APM9928K STD-020C
Contextual Info: APM9928K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel D1 D1 20V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 4.5V RDS(ON) =50mΩ(typ.) @ VGS = 3V • S1 G1 S2 G2 P-Channel Top View of SOP − 8 -20V/-3.2A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

PWM MTD3055

Abstract: MTD3055 FP1 C16
Contextual Info: NX2715 SINGLE CHANNEL MOBILE PWM CONTROLLER WITH NMOS LDO CONTROLLER, PGOOD INDICATOR AND ENABLE ADVANCE DATA SHEET Pb Free Product DESCRIPTION The NX2715 controller IC is a compact synchronous Buck controller IC with 16 lead MLPQ package designed for step down DC to DC converter applications with feedforward functionality. Voltage

f65k

Abstract: LTC3868
Contextual Info: LTC3868-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3868-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency

Contextual Info: LTC3868-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3868-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency

f105k

Contextual Info: LTC3858-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3858-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency

Contextual Info: LTC3858-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3858-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency

LTC3857GN-1

Contextual Info: LTC3857-1 Low IQ, Dual, 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n The LTC 3857-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency

LTC3857GN-1

Abstract: LTC3857 LTC3857-1 LTC3857E-1 LTC3857EGN-1 LTC3857I-1 LTC3857IGN-1
Contextual Info: LTC3857-1 Low IQ, Dual, 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES Low Operating IQ: 50µA One Channel On Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 24V Wide VIN Range: 4V to 38V RSENSE or DCR Current Sensing Out-of-Phase Controllers Reduce Required Input

Contextual Info: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C

Contextual Info: LTC3857-1 Low IQ, Dual, 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n The LTC 3857-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency

RJK0305

Abstract: LTC3868-1 LTC3868E-1 LTC3868EGN-1 LTC3868EUFD-1 LTC3868GN-1 LTC3868IGN-1 LTC3868IUFD-1
Contextual Info: LTC3868-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller Description Features n n n n n n n n n n n n n n n n n n The LTC 3868-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency