N CHANNEL FET TO92 Search Results

1N45B

Contextual Info: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

K596

Abstract: K596 b 01 STK596M CAPACITOR MICROPHONE
Contextual Info: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information

2SK546

Contextual Info: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

fet to92

Abstract: D-PAK package FAST DMOS FET Switches n-CHANNEL FAST DMOS FET Switches improves TN2640 TN2640K4 TN2640LG TN2640N3 DMOS small signal
Contextual Info: Product Summary Sheet TN2640 N-Channel Enhancement-Mode DMOS FET Low Threshold DMOS Technology Applications ! DC-DC converters ! Solid state relays ! Ultrasound pulsers ! Telecom switches ! Photo voltaic drivers ! Analog switches Switching Waveforms and Test Circuit

ZVN4306A

Abstract: DSA003784
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306A ISSUE 3 – JULY 94 FEATURES * 60 Volt VDS * RDS on = 0.33Ω * Spice model available D G APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Product Summary Sheet TN2640 N-Channel Enhancement-Mode DMOS FET Low Threshold DMOS Technology Applications ! DC-DC converters ! Solid state relays ! Ultrasound pulsers ! Telecom switches ! Photo voltaic drivers ! Analog switches Switching Waveforms and Test Circuit

AGQF

Abstract: teledyne fet u Teledyne Semiconductor 0F09
Contextual Info: 5flE D TELEDYNE COMPONENTS Si ODQt.4b l - T '3 5 ~ b _ |* - 2 S ~ TZ403 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TO-92 Plastic Package

C08 27M

Contextual Info: TELEDYNE COMP ONE NT S aaE ûW bOa D GODt , 4 S 4 T SD5501 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE 4-CHANNEL D-MOS FET ARRAY ORDERING INFORMATION Sorted Chips in Waffle Pack 16-Pin Ceramic Duat In-Line Package 16-Plrt Plastic Dual In-Line Package SD5501CHPSD5501J

Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a

941L

Abstract: Teledyne Semiconductor teledyne 302 0171 02
Contextual Info: TELEDYNE COMPONENTS 2ÖE D H 0^171,02 üüOfc.4BS S M _ T - SD2200 SE M IC O N D U C T O R _ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package SD2200DB SD2200DE/R

Contextual Info: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors

NMOS MODEL PARAMETERS SPICE

Abstract: ZVN4424A N-1007 ZVN4424A spice
Contextual Info: Not Recommended for New Design Please Use ZVN4424A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424A/C ZVN4424A/C ISSUE 3 – August 1994 FEATURES * Compact E-LINE TO92 style package * 240 Volt BVDS * RDS(on)=4.3Ω Typical at VGS=2.5V * Low threshold

VN1509

Contextual Info: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

FJN598J

Contextual Info: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET

FJN598J

Contextual Info: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET

2SK1961

Contextual Info: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces

DN5MW

Abstract: DN3545 DN3545N3-G DN3545N8-G
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

DN3545N8-G

Abstract: DN3545 DN3545N3 DN3545N3-G DN3545N8
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

DN5m

Abstract: sot-89 marking dn
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

2SK223

Contextual Info: Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0 5.0 • Ultrahigh withstand voltage VGDS≥–80V . · Due to low gate leakage currents even at high

2SK937

Abstract: Y352 2SK93-7
Contextual Info: Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Large yfs. · Small Ciss. unit:mm 2019B [2SK937] 5.0 4.0 5.0 4.0 0.6 2.0 0.45

J FET RF Cascode Input

Abstract: T431 Teledyne Semiconductor teledyne fet u
Contextual Info: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«