N CHANNEL MOSFET 1400 V Search Results

9n160g

Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data

MRF6V10010NR4

Abstract: AN1955 d2460 A03TK
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

MMRF1019NR4

Contextual Info: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

cree rf

Abstract: UPF14060 UPF14060F UPF14060P
Contextual Info: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

Contextual Info: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

MRF6V10010

Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

F35V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

transistor equivalent table c101

Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

FS20KM-5

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 . •250V • TDS ON (MAX) 0 .1 9 0 ! » I d . 20A 2000V ! »V j dss ¡ • Viso. APPLICATION SMPS, DC-DC Converter, battery charger, power

B1470

Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
Contextual Info: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

z16f

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20VS-5 HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal computer etc. MAXIMUM RATINGS To . 25’C Symbol VDSS V gss Id Id m Po Tch Tstg

Contextual Info: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 • V dss . 300V • ros O N (M AX ) . 0.33Q • ID . 20A • Integrated Fast Recovery Diode (M A X .)

Contextual Info: 2SK1659-L.S SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features ^ ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage ■ Applications • S w itch in g regulators

2sk mosfet

Abstract: 2SK903
Contextual Info: 2SK903 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET • Features ■ O utline Drawings • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving pow er • High voltage ■Applications • Sw itching regulators

B1470

Abstract: FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • V dss . 2.8 ± 0 .2 250V • rDS ON (MAX) . 0 .1 9Q • Id

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20UM-6 HIGH-SPEED SWITCHING USE FS20UM-6 OUTLINE DRAWING D im e n sio n s in mm « • Vdss . 300V • TDS ON (MAX) Î- G A T E DRAIN 3;.: S O U R C E 4) O R AiN

zo102

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20SM-6 HIGH-SPEED SWITCHING USE FK20SM-6 OUTLINE DRAWING , Dimensions in mm 4 .5 1 5 .9 M A X . 10 3.2 ; gj cgi ¡ w CJ| t e I * 2 : 2Í 5.45_J _! JLÎË. c 2.8 f 11 TC1T1 1t"yL iI • Voss . 300V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20VS-6 HIGH-SPEED SWITCHING USE APPLICATION SM P S , D C -D C Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal computer etc. MAXIMUM RATINGS Tc =25°C Ratings Unit vdss Drain-source voltage

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 OUTLINE DRAWING I q Dim ensions in mm J w e o +i Q w r oj CO V d s s . 3 0 0 V q w e r q o- GATE DRAIN SOURCE

sm 4500

Contextual Info: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access