N MOS 100V 100A Search Results
N MOS 100V 100A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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N MOS 100V 100A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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APT10M11LVRContextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR | |
MAX1370
Abstract: APT10M09LVR
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APT10M09B2VR APT10M09LVR O-264 O-264 APT10M09 O-247 MAX1370 APT10M09LVR | |
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Contextual Info: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M11B2VR O-247 APT10M1B2VR | |
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Contextual Info: A dvanced P o w er Tec h n o lo g y APT10M25BNFR APT10M30BNFR POWER MOS IVe 0.025a 100V 75A 100V 75A 0.030Í2 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. |
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APT10M25BNFR APT10M30BNFR APT10M25/10M 30BNFR APT10M25/10M30BNFR O-247AD GGD1411 | |
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Contextual Info: A dvanced P ow er Tec h n o lo g y APT10M25BNFR APT10M30BNFR 2 * WER MOS n i 100V 75A 100V 75A 0.025Q 0.030Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS «D Ail Ratings: Tc = 25°C unless otherwise specified. |
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APT10M25BNFR APT10M30BNFR APT10M25/10M30BNFR O-247AD | |
APT10M09B2VFR
Abstract: APT10M09LVFR
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APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09B2VFR O-247 APT10M09LVFR | |
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Contextual Info: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09B2VFR O-247 | |
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Contextual Info: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 | |
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Contextual Info: APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09 O-247 | |
APT10M11B2VFR
Abstract: TF6646 APT10M11LVFR
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APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 APT10M11B2VFR TF6646 APT10M11LVFR | |
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Contextual Info: APT10M20BFLL APT10M20SFLL 92A 0.020W 100V POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON |
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APT10M20BFLL APT10M20SFLL O-247 O-247 | |
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Contextual Info: APT10M20BLL APT10M20SLL 100V 92A 0.020W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON |
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APT10M20BLL APT10M20SLL O-247 O-247 | |
R7525
Abstract: APT10M19BVFR
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APT10M19BVFR O-247 O-247 MIL-STD-750 R7525 APT10M19BVFR | |
75 LS 541Contextual Info: APT10M19SVR A dvanced P ow er Te c h n o lo g y ' 100V 75A 0.019 fl POWER MOS V Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
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APT10M19SVR APT10M19SVR MIL-STD-750 75 LS 541 | |
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APT10M25SVRContextual Info: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M25SVR Co632) APT10M25SVR | |
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Contextual Info: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M25SVR | |
2N6902Contextual Info: 2N6902 in H a r r i s S E M I C O N D U C T O R 12A, 100V, 0.200 Ohm, N-Channel Logic Level Power MOSFET September 1997 Features Description • 12A, 100V The 2N6902 is an N-Channel enhancement mode silicon gate power MOS field effect transistor specifically designed |
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2N6902 2N6902 | |
tf8050
Abstract: APT10M19BVFR
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APT10M19BVFR O-247 O-247 tf8050 APT10M19BVFR | |
APT10M25BVFRContextual Info: APT10M25BVFR 75A 0.025Ω 100V POWER MOS V FREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
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APT10M25BVFR O-247 O-247 APT10M25BVFR | |
APT10M25BNFR
Abstract: N mos 100v 100A
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APT10M25BNFR APT10M30BNFR APT10M30BNFR 533nH. O-247AD N mos 100v 100A | |
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Contextual Info: APT10M19SVR 75A 0.019Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M19SVR Conti632) | |
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Contextual Info: APT10M25BVFR 100V POWER MOS V 75A 0.025Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M25BVFR O-247 O-247 | |
APT10M25BVFRContextual Info: APT10M25BVFR 100V POWER MOS V 75A 0.025Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M25BVFR O-247 O-247 APT10M25BVFR | |
APT10M07JVRContextual Info: APT10M07JVR 100V 225A 0.007Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M07JVR OT-227 E145592 APT10M07JVR | |