N MOSFET 100V 200A Search Results

E250NS10

Abstract: JESD97 STE250NS10 isotop mosfet 100V
Contextual Info: STE250NS10 N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE250NS10 100V <0.0055Ω 220A • Standard threshold drive ■ 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of

N mosfet 100v 200A

Abstract: FQA90N10V2 100V N-Channel MOSFET
Contextual Info: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

N mosfet 100v 200A

Abstract: 100V N-channel mosfet FQH90N10V2
Contextual Info: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

Contextual Info: FDB047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTA10R220H Power MOSFET 7A, 100V N-CHANNEL FAST SWITCHING MOSFET  DESCRIPTION The UTC UTA10R220H is an N-Channel fast switching MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and low gate charge, etc.

FDP047N10

Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

MOSFET 50V 100A TO-220

Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been

Contextual Info: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advance PowerTrench process that has been especially

Contextual Info: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

FDP047N10

Contextual Info: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

FDB047N10

Abstract: single HIGH SPEED POWER MOSFET
Contextual Info: FDB047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

Mosfet

Abstract: SSF1006A
Contextual Info: SSF1006A 100V N-Channel MOSFET FEATURES ID =200A  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product BV=100V RDS ON =4.7mΩ（Typ.） DESCRIPTION The SSF1006A is a new generation of high voltage and low

Power MOSFET SOT-223

Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
Contextual Info: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

STQ1NE10L-AP

Abstract: q1ne10l Q1NE10
Contextual Info: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive

JESD97

Abstract: N2NE10L STN2NE10L
Contextual Info: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

Q1NE10L

Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
Contextual Info: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive

irf 100v 200A

Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U smd transistor 0081
Contextual Info: PD - 91547C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91547C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International

stq1ne10l

Abstract: Q1NE10L stq1ne10l-ap
Contextual Info: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92

STY140NS10

Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™

STY140NS10

Abstract: Max247TM MAX247
Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™

FQP90N10

Contextual Info: KSM90N10V2/KSMF90N10V2 100V N-Channel MOSFET • • • • • • TO-220F TO-220 Features 90 A, 100V, RDS on = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability