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    N MOSFET 100V 500A Search Results

    N MOSFET 100V 500A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 100V 500A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary The AOT292L/AOB292L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		AOT292L/AOB292L AOT292L/AOB292L O-263 PDF

    Contextual Info: AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary The AOT292L/AOB292L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		AOT292L/AOB292L AOT292L/AOB292L O-263 PDF

    Contextual Info: AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary The AOT296L/AOB296L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 70A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		AOT296L/AOB296L AOT296L/AOB296L O-263 PDF

    Contextual Info: AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary The AOT296L/AOB296L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 70A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)


    Original     		AOT296L/AOB296L AOT296L/AOB296L O-263 PDF

    N2NF10

    Abstract: marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT
    Contextual Info: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor


    Original     		STN2NF10 OT-223 N2NF10 N2NF10 marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT PDF

    Contextual Info: AOL1482 100V N-Channel MOSFET General Description Product Summary The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		AOL1482 AOL1482 PDF

    Contextual Info: AON2290 100V N-Channel MOSFET General Description Product Summary The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		AON2290 AON2290 Junction-to-100 PDF

    Contextual Info: AON2290 100V N-Channel MOSFET General Description Product Summary The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		AON2290 AON2290 Junction-to-Ambie100 PDF

    Contextual Info: AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized


    Original     		AOD4286/AOI4286 AOD4286, AOI4286 O-251A AOD4286 PDF

    AOL1482

    Abstract: N mosfet 100v 500A
    Contextual Info: AOL1482 100V N-Channel MOSFET General Description Product Summary The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AOL1482 AOL1482 N mosfet 100v 500A PDF

    Contextual Info: AOW2918 100V N-Channel MOSFET General Description Product Summary The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of


    Original     		AOW2918 AOW2918 PDF

    Contextual Info: AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due


    Original     		AOT2916L/AOTF2916L AOT2916L AOTF2916L O-220 O-220F PDF

    Contextual Info: AON6482 100V N-Channel MOSFET General Description Product Summary The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AON6482 AON6482 PDF

    Contextual Info: AON6486 100V N-Channel MOSFET General Description Product Summary The AON6486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AON6486 AON6486 PDF

    Contextual Info: AON7296 100V N-Channel MOSFET General Description Product Summary The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		AON7296 AON7296 PDF

    AOT2910l

    Contextual Info: AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are


    Original     		AOT2910L/AOB2910L/AOTF2910L AOT2910L AOB2910L AOTF2910L O-220 O-263 O-220F L/AOB2910L/AOTF2910L AOT2910l PDF

    AOW2918

    Contextual Info: AOW2918 100V N-Channel MOSFET General Description Product Summary The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of


    Original     		AOW2918 AOW2918 O-262 PDF

    Contextual Info: AO4286 100V N-Channel MOSFET General Description Product Summary The AO4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		AO4286 AO4286 PDF

    Contextual Info: AOL1482 100V N-Channel MOSFET General Description Product Summary The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AOL1482 AOL1482 PDF

    Contextual Info: AON6292 100V N-Channel MOSFET General Description Product Summary The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		AON6292 AON6292 PDF

    Contextual Info: AOD2910 100V N-Channel MOSFET General Description Product Summary The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		AOD2910 AOD2910 19ABCDEF PDF

    AON6482

    Contextual Info: AON6482 100V N-Channel MOSFET General Description Product Summary The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AON6482 AON6482 PDF

    AO4482L

    Abstract: ao4482
    Contextual Info: AO4482L 100V N-Channel MOSFET General Description Product Summary The AO4482L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AO4482L AO4482L ao4482 PDF

    AO4286

    Contextual Info: AO4286 100V N-Channel MOSFET General Description Product Summary The AO4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		AO4286 AO4286 PDF