N-CHANNEL, 75V, 50A Search Results
N-CHANNEL, 75V, 50A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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| TC7PCI3212MT |
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2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC |
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| TLP294-4 |
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Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 |
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| TLP293-4 |
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Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 |
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| TLP295-4 |
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Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 |
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N-CHANNEL, 75V, 50A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FDP023N08
Abstract: FDP023N08B
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Contextual Info: FDMS037N08B N-Channel PowerTrench MOSFET 75V, 100A, 3.7mΩ Features Description • RDS on = 3.01mΩ (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet |
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FDMS037N08B FDMS037N08B | |
M05 marking diode
Abstract: FDD16AN08A0 alternator diode 50a 82660 TR VT-O41
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FDD16AN08A0 O-252AA M05 marking diode FDD16AN08A0 alternator diode 50a 82660 TR VT-O41 | |
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Contextual Info: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge |
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FDD16AN08A0 O-252AA | |
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Contextual Info: FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge |
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FDD16AN08A0 O-252AA DD16AN08A0 | |
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Contextual Info: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • DC-DC converters and Off-line UPS • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs |
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FDD16AN08A0 O-252AA 52oC/W) FDD16AN08A0 | |
FDD16AN08A0
Abstract: FDD16AN08A0-F085 DD16A
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FDD16AN08A0 O-252AA DD16AN08A0 FDD16AN08A0-F085 DD16A | |
IXTP170N075T2
Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2
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IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 IXTP170N075T2 ixtp170n075 T170N IXTA170N075T2 | |
IXTP230N075T2
Abstract: 230N075T2 IXTA230N075T2 IXTP230 ixta230n TF230
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IXTA230N075T2 IXTP230N075T2 O-263 230N075T2 IXTP230N075T2 IXTA230N075T2 IXTP230 ixta230n TF230 | |
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Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 |
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IXTA230N075T2 IXTP230N075T2 O-263 230N075T2 | |
FDB045AN
Abstract: FDB045AN08A0 diode marking 53
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FDB045AN08A0 O-263AB FDB045AN diode marking 53 | |
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Contextual Info: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA230N075T2-7 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C |
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IXFA230N075T2-7 O-263 230N075T2 2-26-10-C | |
T230N
Abstract: IXFA230N075T2 IXFA230N075T2-7
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IXFA230N075T2-7 O-263 230N075T2 2-26-10-C T230N IXFA230N075T2 IXFA230N075T2-7 | |
FDB045AN08A0Contextual Info: tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge |
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FDB045AN08A0 O-263AB FDB045AN08A0 | |
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Contextual Info: tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • Starter / Alternator Systems • Qg(tot) = 92nC (Typ.), VGS = 10V • Electronic Power Steering Systems • Low Miller Charge |
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FDB045AN08A0 FDB045AN08A0 O-263AB | |
IXTA90N075T2
Abstract: IXTP90N075T2
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IXTA90N075T2 IXTP90N075T2 O-263 90N075T2 03-06-08-B IXTA90N075T2 IXTP90N075T2 | |
FDB045AN08A0
Abstract: FFDB045AN08A0T
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FDB045AN08A0 O-263AB FDB045AN08A0 FFDB045AN08A0T | |
IXFP230N075T2
Abstract: IXFA230N075T2
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IXFA230N075T2 IXFP230N075T2 O-263 230N075T2 2-26-10-C IXFP230N075T2 IXFA230N075T2 | |
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Contextual Info: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA230N075T2 IXFP230N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 75V = 230A Ω ≤ 4.2mΩ TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C |
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IXFA230N075T2 IXFP230N075T2 O-263 230N075T2 2-26-10-C | |
FDP047AN08A0
Abstract: alternator diode 50a
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FDP047AN08A0 O-220AB FDP047AN08A0 alternator diode 50a | |
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Contextual Info: TrenchT2TM Power MOSFET VDSS ID25 IXTA90N075T2 IXTP90N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 75V = 90A Ω ≤ 10mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 |
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IXTA90N075T2 IXTP90N075T2 O-263 90N075T2 03-06-08-B | |
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Contextual Info: Ordering number : ENA0324A 2SK4065 N-Channel Power MOSFET http://onsemi.com 75V, 100A, 6mΩ, TO-263-2L Features • • ON-resistance RDS on 1=4.6mΩ (typ.) 4V drive • Input capacitance Ciss=12200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA0324A 2SK4065 O-263-2L 12200pF PW10s, L200H, A0324-7/7 | |
all transistors equivalent cross referenceContextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE 4707 Dey Road Liverpool, N.Y. 13088 4300 315 701-6751 FEATURES: 75 Volt Motor Supply Voltage 10 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge |
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MIL-PRF-38534 100KHz MSK4300 all transistors equivalent cross reference | |
IXTP170N075T2
Abstract: IXTA170N075T2 170N075T2
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IXTA170N075T2 IXTP170N075T2 O-263 O-220 170N075T2 2-15-08-A IXTP170N075T2 IXTA170N075T2 | |