N-CHANNEL, 75V, 60A Search Results

P140NF75

Abstract: STP140NF75 STB140NF75T4 B140NF75 STB140NF75 STB140NF75-1 p140nf
Contextual Info: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)

Contextual Info: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)

p140nf

Abstract: p140n P140NF75
Contextual Info: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)

STW160N75F3

Abstract: STP160N75F3 160N75F3 JESD97 STB160N75F3 VDD-375
Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 3 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

160N75F3

Abstract: STP160N75F3 JESD97 STB160N75F3 STW160N75F3 m 0409 STP160
Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

75N75H

Abstract: 75N75 PD137 C712E3
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN75N75HE3 BVDSS RDSON ID Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 1/6 75V 11 mΩ 80A Description The MTN75N75HE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: Ordering number : ENA1820 BMS4007 N-Channel Power MOSFET http://onsemi.com 75V, 60A, 7.8mΩ, TO-220ML LS Features • • • ON-resistance RDS(on)=6mΩ (typ.) Input capacitance Ciss=9700pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C

IXFZ520N075T2

Contextual Info: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFETs VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS

140tr

Contextual Info: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFK520N075T2 IXFX520N075T2 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

MMIX1F520N075T2

Abstract: IXFZ520N075T2 ixfz520n075
Contextual Info: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFN520N075T2 = = 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions

Contextual Info: AP95T07GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic RoHS Compliant & Halogen-Free ID G 75V 5m 80A S Description

n-channel, 75v, 80a

Abstract: marking codes transistors SSs ssm95t07gp
Contextual Info: SSM95T07GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant BVDSS 75V RDS ON 5mΩ 80A ID G S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp.

IXTP170N075T2

Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75

IXTP230N075T2

Abstract: 230N075T2 IXTA230N075T2 IXTP230 ixta230n TF230
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N075T2 IXTP120N075T2 VDSS ID25 = 75V = 120A Ω ≤ 7.7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75