N-CHANNEL 12-V D-S MOSFET Search Results
N-CHANNEL 12-V D-S MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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| D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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| D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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N-CHANNEL 12-V D-S MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si4838DYContextual Info: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4838DY 08-Apr-05 | |
Si4838DYContextual Info: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4838DY S-03267--Rev. 02-Apr-01 | |
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Contextual Info: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4838DY 18-Jul-08 | |
Si4838DY
Abstract: si4838
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Si4838DY S-03662--Rev. 14-Apr-03 si4838 | |
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Contextual Info: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4838DY S-02649--Rev. 04-Dec-00 | |
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Contextual Info: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9 |
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Si7540DP 07-mm 500-kHz 08-Apr-05 | |
Si7540DPContextual Info: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9 |
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Si7540DP 07-mm 500-kHz S-31728--Rev. 18-Aug-03 | |
Si7540DP
Abstract: DIODE TH 5 N
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Si7540DP 07-mm 500-kHz S-22387--Rev. 16-Dec-02 DIODE TH 5 N | |
Si6552DQContextual Info: Tem ic SÌ6552DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel P-Channel 20 12 r DS(on) ( ß ) I d (A) 0.08 @ VGs = 4.5 V ±2.8 0.11 @ VGS = 2.5 V ±2.1 0.1 @ VGs = -4.5 V ±2.5 0.18 @ VGS = -2.5 V |
OCR Scan |
6552DQ S-47620--Rev. 12-Aug-96 Si6552DQ | |
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Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package |
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Si1557DH SC-70 OT-363 SC-70 S-21453--Rev. 19-Aug-02 | |
Si1557DHContextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package |
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Si1557DH SC-70 OT-363 SC-70 S-21684--Rev. 30-Sep-02 | |
Si1557DHContextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package |
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Si1557DH SC-70 OT-363 SC-70 18-Jul-08 | |
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Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package |
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Si1557DH SC-70 OT-363 SC-70 08-Apr-05 | |
SI7540DPContextual Info: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET |
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Si7540DP 07-mm 500-kHz S-21417â 12-Aug-02 | |
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Contextual Info: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a |
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SiA533EDJ 081at 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S |
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Si4884DY S99-041--Rev. 04-Oct-99 | |
si4884dyContextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S |
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Si4884DY S-61804--Rev. 21-Jun-99 | |
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Contextual Info: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a |
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SiA533EDJ 081at 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a |
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SiA533EDJ 081at 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a |
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SiA533EDJ 081at 2002/95/EC SC-70-6 11-Mar-11 | |
si4402d
Abstract: Si4402DY si4402
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Si4402DY 08-Apr-05 si4402d si4402 | |
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Contextual Info: SiA527DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) () Max. 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.041 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V |
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SiA527DJ SC-70-6 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SC-70-6
Abstract: SiA533EDJ 65706
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SiA533EDJ 081at 2002/95/EC 18-Jul-08 SC-70-6 65706 | |
S99-041Contextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S |
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Si4884DY S99-041--Rev. 04-Oct-99 S99-041 | |