N-CHANNEL 2.5V SOT223 Search Results

FDN336P

Abstract: SOIC-16
Contextual Info: N ovem ber 1998 FAIRCHILD S E M IC O N D U C T O R TM FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

CBVK741B019

Abstract: F63TNR F852 FDT439N PN2222A 63a30
Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

63a17

Abstract: FDT439N SOT223
Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

Contextual Info: FAIRCHILD S E M IC O N D U C T O R November 1998 tm FDS6875 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to

S 0240

Contextual Info: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

FDN340P

Contextual Info: FAIRCHILD November 1998 M IC D N D U C T D R - FDN340P Single P-Channel 2.5V Specified PowerTrench MOSFET F eatures G eneral Description This P-Channel 2.5V specified M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)

NDT453N

Abstract: NDT2955 SOT223 FDT3612 FDT459N FDT439N FDT457N FQT13N06 FQT13N06L NDT452AP HUF75309T3ST
Contextual Info: Discrete MOSFET SOT-223 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-223 N-Channel NDT453N 30 Single 0.028 0.042 - - 28 8 3 FDT439N 30 Single - 0.045 0.058 - 10.7 6.3

APM2054N

Abstract: apm2054 APM2054N equivalent apm2054n datasheet transistor apm2054n equivalent transistor apm2054nv equivalent APM2054NV STD-020C APM205
Contextual Info: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 4.5V RDS(ON)= 110mΩ (typ.) @ VGS= 2.5V • • • Super High Dense Cell Design Top View of SOT-223 Reliable and Rugged

2054n

Abstract: 2054-N ED750 APM2054N
Contextual Info: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mW (typ.) @ VGS= 10V RDS(ON)= 45mW (typ.) @ VGS= 4.5V G RDS(ON)= 110mW (typ.) @ VGS= 2.5V • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D S Super High Dense Cell Design

IC tl 072

Abstract: APM2030ND STD-020C APM2030N
Contextual Info: APM2030ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • • • G D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

2030N

Abstract: APM2030N IC tl 072 STD-020C APM2030NV m2030n
Contextual Info: APM2030NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-223

apm2054n

Abstract: APM2054N equivalent apm2054n datasheet 2054N marking code IR SOT89 A3 22 2054-N apm2054 apm2054n to-252 APM 2054N 45580 jrc
Contextual Info: APM2054N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12A, RDS ON =35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

2055N

Abstract: APM2055N td 2003 ap MARKING 93 SOT-223 A1 SOT-223 MOSFET APM2055N equivalent A102 J-STD-020A TO-252 N-channel MOSFET M2055
Contextual Info: APM2055N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12A, RDS ON =55mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

hall sensor sot-143

Abstract: FSP3126 fsp210 sot-23-6 step down REGULATOR FSP2102 FSP393 FSP1084 FSH4913 step down Voltage Regulator sop8 step down Voltage Regulator sop8 2a
Contextual Info: Selection Guide of Foslink Semiconductor Co. •Hall Sensor Low Power Omnipolar single output - Contact-less Application Part Number Operating Point Bop(Gauss) Brp(Gauss) Operating Voltage Output Current FSH4913 Open Drain 2.4V~5.5V 1mA ±55 ±45 -40~85 FSH4917 Open Drain

FSP3131

Abstract: FSP3126 FSP3304 3122 adj ldo SOT23 ENABLE msa MSOP8 step down Voltage Regulator sop8 2a FSP 3122 fsp312 fsp3121
Contextual Info: Selection Guide of Foslink Semiconductor Co. •Hall Sensor Low Power Omnipolar single output - Contact-less Application Additional Operating Part Output Current Features Voltage Number Operating Point Bop(Gauss) Brp(Gauss) Operating Temp. Package Availability

tl2431

Abstract: sp34063 XRP7657 TL243 SP6260 Step-up 12V to 19V 5A XRP7740 SP2525A XRP29302 sp7121
Contextual Info: Power Management Power Conversion Switching Regulators Switching Controllers LDOs & Regulators System Controls Power Switches Voltage References Supervisors LED Lighting Regulators Controllers Current Drivers PowerXR Digital Switching Controllers 2010 www.exar.com

3-pin switch PWM sot89

Abstract: 8L-10L SPX29152
Contextual Info: DC to DC Buck and Boost Regulators Input Voltage Range Output Voltage Range Buck 6.0V to 7.5V Buck SP6641 Boost Part Number Type SP6639 SP6640 IOUT Efficiency adj; 5.0V 100mA 10µA 91% ✔ 4.0V to 7.5V adj; 3.3V 100mA 10µA 87% ✔ 0.9V to 4.5V 3.3V or 5.0V

SP6654

Abstract: SPX29152
Contextual Info: Power Management Programmable Power Management Systems Power Modules Universal PMICs Power Conversion Switching Regulators Switching Controllers LDOs & DDR System Controls Power Switches Voltage References Supervisors LED Lighting Switching Regulators Linear Drivers

Contextual Info: LT3029 Dual 500mA/500mA Low Dropout, Low Noise, Micropower Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n Output Current: 500mA per Channel Low Dropout Voltage: 300mV Low Noise: 20 VRMS 10Hz to 100kHz Low Quiescent Current: 55μA per Channel