N-CHANNEL 609 Search Results

N-CHANNEL 609 Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
TLP292-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16
TLP295-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16
TC7PCI3212MT	Toshiba Electronic Devices & Storage Corporation	2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC
TLP294-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16

N-CHANNEL 609 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on\| < 0.075 Q, VGS = 10 V, ID = 4 A P-channel: RDS(im < 0.! 2 O, V GS = - 1 0 V, ID = - 4 A • Capable o f 4 V gate drive	OCR Scan	4AM12 2SJ173	PDF
2SK series Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series Contextual Info: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153	OCR Scan	2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series	PDF
Contextual Info: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially	Original	APQ5ESN40AH APQ5ESN40AF 00V/5	PDF
Contextual Info: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially	Original	APQ5ESN40AH APQ5ESN40AF 00V/5	PDF
mosfet 400V Contextual Info: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially	Original	APQ5ESN40AH APQ5ESN40AF 00V/5 mosfet 400V	PDF
Contextual Info: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S S em iconductor Novem ber 1998 Data Sheet 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs The HUF75333 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology	OCR Scan	HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S HUF75333 O-263AB	PDF
Apq50sn06 Abstract: APQ50SN06AH apQ50SN06A Contextual Info: DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ50SN06AH 0V/50A APQ50SN06AH-XXM0 Apq50sn06 APQ50SN06AH apQ50SN06A	PDF
APQ03SN80AB Abstract: MOSFET 800V 3A 800VVGS Contextual Info: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ03SN80AB 00V/3A APQ03SN80AB-XXM0 APQ03SN80AB MOSFET 800V 3A 800VVGS	PDF
APQ57SN10BH Contextual Info: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ57SN10BH 00V/57A APQ57SN10BH-XXM0 APQ57SN10BH	PDF
Contextual Info: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ03SN80AB 00V/3A	PDF
ltbd Contextual Info: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 2 Features 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ57SN10BH 00V/57A ltbd	PDF
tr/54/APQ02SN60AH-XXM0 Contextual Info: DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ02SN60AH APQ02SN60AF 00V/2A tr/54/APQ02SN60AH-XXM0	PDF
521 MOSFET Abstract: MOSFET 546 Contextual Info: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ16SN06AA APQ16SN06AB 0V/16A 521 MOSFET MOSFET 546	PDF
K 2915 MOSFET Abstract: APQ02SN60AF SWITCHING DIODE 600V 2A MOSFET 40A 600V APQ02SN60AH 600V 2A MOSFET N-channel mosfet 600V 100A Mosfet 600V, 2A MOSFET 600V 2A Contextual Info: DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ02SN60AH APQ02SN60AF 00V/2A APQ02se K 2915 MOSFET APQ02SN60AF SWITCHING DIODE 600V 2A MOSFET 40A 600V 600V 2A MOSFET N-channel mosfet 600V 100A Mosfet 600V, 2A MOSFET 600V 2A	PDF

Contextual Info: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ16SN06AA APQ16SN06AB 0V/16A	PDF
75333p Abstract: MOSfet 4362 HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3S HUF75333S3ST TA75333 Contextual Info: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 56A, 55V The HUF75333 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced	Original	HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S HUF75333 1-800-4-HARRIS 75333p MOSfet 4362 HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3S HUF75333S3ST TA75333	PDF
75343p Abstract: 75343 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343 Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S S E M I C O N D U C T O R 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 75A, 55V The HUF75343 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced	Original	HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S HUF75343 1-800-4-HARRIS 75343p 75343 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343	PDF
7803 3V Abstract: 2SK575 nf 749 Contextual Info: SONY GaAs N-channel MES FET a D e scrip tio n : The 2SK575 is a low noise N-channel GaAs FET having a 0.5 micron gate length designed for amplifiers up to the Kuband. Hermetic sealed ceramic packaging has been adopted to ensure high reliability. Superior characteristics can be	OCR Scan	2SK575 12GHz 7803 3V nf 749	PDF
Contextual Info: HUFA75343G3, HUFA75343P3, HUFA75343S3S TM Data Sheet November 2000 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUFA75343G3, HUFA75343P3, HUFA75343S3S	PDF
75343p Abstract: fairchild to-220ab 75343P TA75343 75343 75343G 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST Contextual Info: HUFA75343G3, HUFA75343P3, HUFA75343S3S Data Sheet November 2000 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUFA75343G3, HUFA75343P3, HUFA75343S3S 75343p fairchild to-220ab 75343P TA75343 75343 75343G 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST	PDF
75343p Abstract: 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343 Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75343G3, HUF75343P3, HUF75343S3S 75343p 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343	PDF
Contextual Info: DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 2 Features 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide	Original	APQ08SN50BH APQ08SN50BF 00V/8A	PDF
75343p Abstract: 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF75343G3, HUF75343P3, HUF75343S3S 85e-2 76e-3 35e-3 64e-2 48e-1 23e-1 96e-2 75343p 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P	PDF
fairchild to-220ab 75343P Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF75343G3, HUF75343P3, HUF75343S3S fairchild to-220ab 75343P 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334	PDF

N-CHANNEL 609 Search Results

N-CHANNEL 609 Result Highlights (5)

N-CHANNEL 609 Datasheets Context Search

2SK series

mosfet 400V

Apq50sn06

APQ03SN80AB

APQ57SN10BH

ltbd

tr/54/APQ02SN60AH-XXM0

521 MOSFET

K 2915 MOSFET

75333p

75343p

7803 3V

75343p

75343p

75343p

fairchild to-220ab 75343P