N-CHANNEL 900V 9A Search Results

FQA9N90C

Contextual Info: TM FQA9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQPF9N90C

Abstract: FQP9N90C
Contextual Info: TM FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: TM FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQA9N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQA9N90C

Abstract: F109
Contextual Info: QFET FQA9N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

n-channel 900v 9a

Abstract: 900V N-Channel QFET FQA9N90C 900v mosfet F109
Contextual Info: QFET FQA9N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

n-channel 900v 9a

Abstract: FQA9N90C F109
Contextual Info: QFET FQA9N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

900v mosfet

Abstract: n-channel 900v 9a
Contextual Info: TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

Contextual Info: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

n-channel 900v 9a

Abstract: TSM9N90CZ TSM9N90 power mosfet 900v
Contextual Info: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

2sk2082

Abstract: 2SK2082-01 equivalent 2SK2082-01 n-channel 900v 9a
Contextual Info: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2082-01 equivalent

Abstract: 2SK2082
Contextual Info: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

n-channel 900v 9a

Abstract: 2Sk2082 2SK2082-01 equivalent 2SK2082-01 900v mosfet
Contextual Info: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2sk2082

Abstract: 2SK2082-01 equivalent
Contextual Info: FU JI 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V 9A 150W > Outline Drawing > Features - 1,4Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

18n90

Abstract: ixfh18n90 B1 9A IXFV18N90P IXFH18N90P IXFV18N90PS PLUS220SMD
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 18A Ω 600mΩ 300ns PLUS220 (IXFV) Symbol Test Conditions

9N90

Abstract: 0408 G Diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

Contextual Info: AOTF9N90 900V, 9A N-Channel MOSFET General Description Product Summary The AOTF9N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

Contextual Info: AOK9N90 900V,9A N-Channel MOSFET General Description Product Summary The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOK9N90 900V,9A N-Channel MOSFET General Description Product Summary The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90-Q Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use

9n90

Abstract: N-channel MOSFET to-247 TO-220F1 IGSS
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Preliminary Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION  The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use