N-CHANNEL DEPLETION MODE FIELD EFFECT TRANSISTOR Search Results

P-Channel Depletion Mosfets

Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
Contextual Info: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,

2n5457 pin out

Abstract: 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457
Contextual Info: 2N5457, 2N5458 Preferred Device JFETs − General Purpose N- Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com N-Channel for Higher Gain

FET 4900

Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
Contextual Info: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage

sot transistor pinout

Abstract: n channel depletion MOSFET 351 SOT223 CPC5602C
Contextual Info: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage

BSD20

Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
Contextual Info: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.

FET SOT-89 N-Channel

Abstract: CPC3710C ignition module sot89 fet
Contextual Info: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third

RY115

Abstract: CPC3714C R00a D 4242 transistor
Contextual Info: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third

MMT3823

Abstract: micro-T Package
Contextual Info: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

BSD12

Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
Contextual Info: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

FET SOT-89 N-Channel

Abstract: D 4242 transistor CPC3720C FET SOT-89
Contextual Info: CPC3720C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 22Ω IDSS (min) Package 130mA SOT-89 Description The CPC3720C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third

depletion mode fet

Abstract: CPC3730C MOSFET 350V SOT-89
Contextual Info: CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 30Ω IDSS (min) Package 140mA SOT-89 Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third

2N4391

Abstract: 2n4393 2N43 J3060 2N4392
Contextual Info: PRELIMINARY SPECIFICATION SEC FIELD-EFFECT TRANSISTORS ELECTRON DEVICE 2N4391,2N4392,2N4393 HIGH SPEED SW ITCHING AND CHOPPER N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR DESCRIPTION The 2N 4391, 2N 4392, 2N 4393 are depletion mode ju n ctio n field effect transistors, designed fo r high speed sw itching and

MPF4391

Abstract: MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391
Contextual Info: MPF4391, MPF4392, MPF4393 SILICON SILICON N-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (T yp e A ) Junction F ield -E ffect Transistors designed for chopper and high-speed switching applications.

motorola 304

Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Contextual Info: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier

2N5640

Abstract: 2N5640 MOTOROLA 2N5638 2N5639 2N5639 MOTOROLA motorola 2N5639
Contextual Info: 2N5638 2N5639 2N5640 ● I N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode Type A Junction Field-Effect designed for chopper and high-speed switching @ Low Drain-Source “ON” rds(o”) = Resistance Transistors applications. — 30 Ohms (2 N5638)

u175

Abstract: MPF112
Contextual Info: MPF 112 SILICON SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Depletion Mode (Type A ) device designed fo r V H F am plifier and mixer applications. • Low Cross-Modulation Distortion • Low Transfer Capacitance - C rss = 3.0 pF (Typ) @ V q $ = 10 Vdc

MFE824

Abstract: Field-Effect Transistors 10mmho
Contextual Info: MFE824 silicon SILICON N-CHANNEL N-CHANNEL MOS FIELD-EFFECT TRANSISTORS MOS FIELD-EFFECT TRANSISTORS Depletion-Enhancem ent Mode. (Type B) M O S Field-E ffect Tran­ sistors designed fo r use in smoke detector circuits. • Low Gate Reverse Current — *GSS " 1-0 pA dc (M ax) @ V q s = 10 Vdc

Depletion MOSFET

Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
Contextual Info: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

MPF109

Abstract: color codes TRANSISTOR
Contextual Info: MPF109 SILICON SILIC O N N-CHANNEL JUNCTION FIELD-EFFECT T R AN SIST O R JUNCTION FIELD-EFFECT TRAN SISTO R Depletion mode transistor designed for general-purpose audio and switching applications. SY M M E T R IC A L SILICO N N-CHANNEL • Devices are Classified and Identified in 2:1 Zero-Gate Voltage

MPF108

Contextual Info: MPF108 SILICON JUNCTION FIELD-EFFECT TRAN SISTO R SILICO N N-CHANNEL JUNCTION FIELD-EFFECT T R A N SIST O R SY M M E T R IC A L SILICO N N-CHANNEL Depletion mode (Type A) transistor designed for V H F amplifier and mixer applications. Type A • Devices are Classified and Identified in 2:1 IQ SS Ranges

Contextual Info: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

BSD10

Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
Contextual Info: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

N-Channel JFET FETs

Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
Contextual Info: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are