N-CHANNEL DUAL-GATE GAAS MESFET Search Results

smd transistor marking cf

Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

transistor smd cf

Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

transistor marking YD ghz

Abstract: EHT07317
Contextual Info: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

MESFET Application

Abstract: 52s marking MARKING 52S
Contextual Info: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2

DC bias of FET

Abstract: Variable resistor 5k AD220-25 AT002S3-12 Alpha 1000 FET
Contextual Info: GaAs FETs as Control Devices -5 V Gallium arsenide MESFETs are being used in RF control device applications as switches and attenuators. They are very easily adapted to monolithic circuit form, dissipate essentially no power and can easily be designed into

NE25339

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, I ds = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz

U78 IC

Abstract: mesfet fet
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V g s = 1 V, I ds = 10 mA, f = 900 MHz S U IT A B L E F O R U S E A S R F A M P L IF IE R A N D M IX E R IN U H F A P P L IC A T IO N S L O W C R S S : 0.02 pF TYP

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POW ER GAIN AND NOISE F IG U R E v s. DRAIN TO S O U R C E V O LTA G E V g s = 1 V , Id s = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz

ic pt 2389

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C rs s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m T> LOW NF: 1.1 dB TYP AT 900 MHz

J Fet marking 2 AW

Abstract: 10E-15
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz

PM2104

Abstract: BAV99ZXCT PM2105 IRFD9120 BAV99ZXCT-ND IRFD9120 N CHANNEL NDC652PCT BC847C BCW60D BCW61D
Contextual Info: Application Note 2798 Current Regulation and DC Sequencing Circuits for Dual Supply GaAs Power Amplifiers Introduction The purpose of this application note is to address the issue of DC operation for Pacific Monolithics’ dual supply GaAs power amplifiers. The PM2107 is used in this application note as the example. A

TQTRX

Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
Contextual Info: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor

mesfet datasheet by motorola

Abstract: AN1580 AN1599 MC33169 MMBD701LT1 MMSF4N01HD MRFIC0913 MRFIC0917 motorola operational amplifier motorola rf spice
Contextual Info: Order this document by AN1599/D AN1599 Power Control with the MRFIC0913 GaAs IPA and MC33169 Support IC Prepared by: Dominique Brunel, Christophe Fourtet, Jacques Trichet, Jean–Baptiste Verdier, Mark Williams Motorola Semiconductor Products Sector INTRODUCTION

u-79

Abstract: NE25339
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES • • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • Lgi = 1.0 Jim, Lg2 = 1.5 Jim, Wg = 800 Jim

NE25339

Abstract: NE25339-T1 KDB00 uhf microwave fet
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF TYP GPS 20 10 • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm

body contact FET soi RF switch

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
Contextual Info: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises

mesfet datasheet by motorola

Abstract: high power fet amplifier schematic n channel depletion MOSFET AN1580 AN1599 MC33169 MMBD701LT1 MMSF4N01HD MRFIC0913 MRFIC0917
Contextual Info: Freescale Semiconductor, Inc. Order this document by AN1599/D AN1599 Power Control with the MRFIC0913 GaAs IPA and MC33169 Support IC Prepared by: Dominique Brunel, Christophe Fourtet, Jacques Trichet, Jean–Baptiste Verdier, Mark Williams Motorola Semiconductor Products Sector

NE25337

Abstract: KR sot-143 NE25339 marking X_j sot u79 018
Contextual Info: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)

s parameters 4ghz

Abstract: transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters
Contextual Info: NEC 53C 6 4 2 7 4 1 % N E C/ CA LI F O R NI A N E C / S3 CALIFORNIA 00806 D E | t.4E ?m 4 ODDOflOti fi W~ MICROWAVE TRANSISTOR SERIES NE463 D u a l G a t e G a A s M E S F E T FEATURES DESCRIPTION AND APPLICATIONS • T h e N E 4 6 3 is a dual-gate G a A s F E T designed fo r lo w n oise

jx 903

Contextual Info: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►j45p ►J S Op Unit» In im ►jwp • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT • +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAIVGOLD GATE • DIAMOND-UKE CARBON (DLC PASSIVATION

Contextual Info: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►|45p ►j w p Units in |im 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-LIKE CARBON DLC PASSIVATION

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.

Contextual Info: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz

e2513

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 P O W ER GA IN A N D N O IS E F IG U R E vs. D R A IN T O S O U R C E V O LT A G E SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER GPS LOW C r s s : 0.02 pF TYP A n m •o HIGH GPS: 20 dB (TYP) AT 900 MHz