IRFP360
Abstract: TB334
Text: IRFP360 Data Sheet January 2002 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field
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IRFP360
O-247
IRFP360
TB334
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irfp360
Abstract: TB334
Text: IRFP360 Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field
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IRFP360
O-247
irfp360
TB334
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IRF360
Abstract: No abstract text available
Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF360
O-204AA/AE)
IRF360
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IRF360
Abstract: IRF3601 mosfet irf360
Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF360
O-204AA/AE)
IRF360
IRF3601
mosfet irf360
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BT 13A
Abstract: IRFP360
Text: IRFP360 Data Sheet Title FP3 bt A, 0V, 00 m, an- 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFP360
TA17464.
BT 13A
IRFP360
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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mosfet 500v 10A
Abstract: FL14KM-10A
Text: MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3
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FL14KM-10A
mosfet 500v 10A
FL14KM-10A
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FL14KM-10A
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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IR2153Z
Abstract: ir2153
Text: PD-60024D IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout
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PD-60024D
IR2125Z
230mV
150ns
IR2125Z
MO-036AA
IR2153Z
IR2153Z
ir2153
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IR2125Z
Abstract: No abstract text available
Text: Data Sheet No. PD-6.024A IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout
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IR2125Z
IR2125Z
MO-036AA
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ISL8240
Abstract: ISL6840 ISL21060
Text: P WERING INFRASTRUCTURE Telecom/Datacom, Wired Networks and Data Storage P WERING INFRASTRUCTURE The increased amount of data and video all of which can be configured using Intersil’s being transmitted via the cloud has placed PowerNavigator — the industry’s most
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LC-113
ISL8240
ISL6840
ISL21060
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IGBT 500V 35A
Abstract: IR2125Z MO-036aa
Text: PD - 60024B IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout
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60024B
IR2125Z
IR2125Z
IGBT 500V 35A
MO-036aa
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IR2125Z
Abstract: IR2153Z
Text: PD - 60024C IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout
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60024C
IR2125Z
IR2125Z
MO-036AA
IR2153Z
IR2153Z
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5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical
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Si4418DY
130mOhm@
Si4420BDY
Si6928DQ
35mOhm@
Si6954ADQ
53mOhm@
SiP2800
SUM47N10-24L
24mOhm@
5a6 zener diode
dual mosfet dip
diode zener 6.2v 1w
10v ZENER DIODE
5A6 smd sot23
DG9415
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IJW120R070T1
Abstract: IJW120R silicon carbide
Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description
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IJW120R070T1
IJW120R070T1
IJW120R
silicon carbide
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FL14KM-10A
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TV flyback transformer pinout
Abstract: xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer
Text: TND334/D Rev. 2, JUN − 2009 50 W Four−Output Internal Power Supply for Set Top Box Reference Design Documentation Package Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 2 1 Publication Order Number: TND334/D Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes
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TND334/D
TV flyback transformer pinout
xbox schematic diagram
xbox power supply schematic diagram
ncp1207 smd
transformer less power supply 12 volt 3A
600 volt mosfet
TRANSISTOR SMD C22B
SMD ZENER DIODE 26b
NCP1337
TV flyback transformer
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relay finder 45.61
Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
Safety10
A331-1-C2A7M
A331-1-C2-A73
24Vdc
110Vac
240Vac
A331-1-C2-A7D
relay finder 45.61
reed 3500 2301 151
MT2C93419
reed 3500 2301
tyco igbt module 25A 1200V
5V SPST DIL Reed Relay
Transistor tag 9013
Triac TAG 9013
3258 smd led
varistor BS415
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irfp360
Abstract: No abstract text available
Text: IRFP360 S e m iconductor Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field
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IRFP360
O-247
D4-345
irfp360
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Untitled
Abstract: No abstract text available
Text: PRODUCT G Â T A I 1 N~CHANNEL ENHANCEMENT MOS FET 400V, 150A. 0.035D SDF150NA40 HE FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
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SDF150NA40
MIL-STD-883
300kS.
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2N6792 JANTX
Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds
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2N6792
2N6792
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6792 JANTX
C055
LH0063
QPL-19500
2N6904
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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IRF9140
IRF9230
IRF9240
irf440
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LT812
Abstract: No abstract text available
Text: UN IT RO DE CORP 9347963 TE ¿ F | cî 3M7cib3 U N I T R O D E CORP 92D 10554 GD1DSSM D POWER MOSFET TRANSISTORS 4 0 0 V olt, 1 .8 O h m N -Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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