N-CHANNEL MOSFET 90V Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

UF630L-TM3-T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET „ DESCRIPTION 1 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

UTC UF630L

Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

UF630L-TN3-R

Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

UF630L-TN3-R

Abstract: uf630 power mosfet UF630 UF630L-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 9A, 400V N-CHANNEL POWER MOSFET 1 „ The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

20n50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N50 Preliminary Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 9A, 400V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

9N40

Abstract: 552 diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 8.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 „ The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

AN7254

Abstract: AN7260 AN9321 AN9322 HAF70009 TB334
Contextual Info: HAF70009 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

UTC UF630L

Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low

Contextual Info: FAN73402 LED Backlight Driving Boost Switch Features Description • • The FAN73402 is a single-channel boost controller that integrates an N-channel power MOSFET for PWM dimming using Fairchild’s proprietary planar Doublediffused MOSFET DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low

Contextual Info: FDB42AN15A0_F085 N-Channel Power Trench MOSFET June 2013 FDB42AN15A0_F085 N-Channel Power Trench® MOSFET 150V, 35A, 42mΩ D D Features „ Typ rDS on = 30mΩ at VGS = 10V, ID = 12A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A G „ UIS Capability „ RoHS Compliant

SSM1N45B

Contextual Info: SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

1N45B

Abstract: SSN1N45BTA SSN1N45B
Contextual Info: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSN1N45B

Contextual Info: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

FQPF6N45

Contextual Info: QFET TM FQPF6N45 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

IRFZ44 equivalent

Abstract: H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155
Contextual Info: LTC1155 Dual High Side Micropower MOSFET Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no