N-CHANNEL MOSFET TRANSISTOR LOW POWER Search Results

Contextual Info: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance

Contextual Info: DMB54D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance

Contextual Info: DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance

Contextual Info: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance

DMB53D0UDW

Contextual Info: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance

DMB53D0UV

Contextual Info: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance

J-STD-020D

Contextual Info: DMB54D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max

DMB54D0UDW

Abstract: J-STD-020D 220J0
Contextual Info: DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max

DMB53D0UDW

Abstract: J-STD-020D
Contextual Info: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max

DMB53D0UV

Abstract: J-STD-020D
Contextual Info: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer

Contextual Info: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

BSD12

Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
Contextual Info: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low

sd 431 transistor

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY

Contextual Info: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118

NXP SMD ic MARKING CODE

Contextual Info: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118

25n06

Abstract: 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on.

UT3416L-AE3-R SOT-23

Abstract: UT3416G-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3416 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low

HPF730

Abstract: T74 relay
Contextual Info: HPF 730 PRELIMINARY N-CHANNEL POWER MOSFET General Description The HPF730 is a n-channel, enhancement-mode, silicon-gate field-effect transistor for use in power applications. The advanced power MOSFET has been designed to provide very low on-state resistance

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2722UGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2722UGR is N-channel MOSFET optimized as low side of synchronous rectifier DC/DC converter. 8 5 1, 2, 3

HPF730

Abstract: power relay N-channel mosfet
Contextual Info: HPF730 PRELIMINARY N-CHANNEL POWER MOSFET General Description The HPF730 is a n-channel, enhancement-mode, silicon-gate field-effect transistor for use in power applications. The advanced power MOSFET has been designed to provide very low on-state resistance