N-CHANNEL SWITCH INTERSIL Search Results

mosfet 2n4351

Abstract: 2N4351
Contextual Info: 2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

LS4352

Contextual Info: LS4352 N-CHANNEL MOSFET The LS4352 is an enhancement mode N-Channel Mosfet The LS4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

Contextual Info: LS3N171 N-CHANNEL MOSFET The LS3N171 is an enhancement mode N-Channel Mosfet The LS3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

bare Die mosfet

Contextual Info: LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

2N4352

Contextual Info: 2N4352 N-CHANNEL MOSFET The 2N4352 is an enhancement mode N-Channel Mosfet The 2N4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

td 1603

Contextual Info: 3N171 N-CHANNEL MOSFET The 3N171 is an enhancement mode N-Channel Mosfet The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

3N170

Contextual Info: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

Contextual Info: LS3N170 N-CHANNEL MOSFET The LS3N170 is an enhancement mode N-Channel Mosfet The LS3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

JFET 2N5457

Abstract: 2n5459 2N5457-2N5459 2n5457 2n5458
Contextual Info: SOLID STATE Gl J>Fj3ö7S0fll D G l ü i n N-Channel JFET General Purpose Amplifier/Switch PIN CONFIGURATION ai ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted Drain-Gate Voltage . 25V

Contextual Info: STATE 01 G E SOLID DE J 3fl7SGÛl STATE 01E D011D42 11042 1 D J108-J110 N-Channel JFET Switch FEATURES APPLICATIONS • • • • • • • • Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch

Contextual Info: Intersil Hlgh-Rellablllty Products DG180-191 High Relid|Sfffy High- Speed Driver 0 \ 3P ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog'jfates consist of g^s 2 or 4 N-channel junction-type field-effect transistors JFET

U1899

Abstract: U1898 U1897 U1898-18 U1897-18 U1899-18
Contextual Info: G E SOLI» STATE □1 U1897-U1899 3875081 G E S O L ID DE [ 3675D51 0 □ 110 b E 7 | 0 IE STA TE 11062 D U1897-U1899 N-Channel JFET Switch FEATURES APPLICATIONS • Low Insertion L o ss • No Error or Offset Voltage Generated By Closed Switch • Analog Switches, Choppers

Contextual Info: G E SOLID STATE □1 DE | 3fl75Dfll DDllOMM S | 3875081 G E SOLID STATE 01E 11044 T - 3 D 7 ~ 2- 5“ n J174-J177 7 P-Channel JFET Switch «• APPLICATIONS Ê FEATURES • Analog Switches • Choppers • Commutators • Low Insertion Loss • No Offset or Error Generated By Closed Switch

55D8

Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186
Contextual Info: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting

4392

Abstract: 2N4393 2N4391-93 2N4392 4392 dl 2N4391 ITE4393 ITE4392
Contextual Info: 01 G E SOLI» STATE DE 13fl?50fll D01DT7Ô °ì | 3875081 G E SOLID STATE 01E 10978 S 2N4391- 2N4393, S ITE4391- ITE4393 T- 35 - 2.5 7 N-Channel JFET Switch « n + u fc ri ABSOLUTE MAXIMUM RATINGS FEATURES • rd s o n < 3 0 0 D (Ta = 25°C unless otherwise noted)

ITE4391

Contextual Info: DI E SOLI» STATE DE 3fl750fll DD1D17S 1 | 3875081 G E SOLID STATE 2 N 4 3 9 1 -2 N 4 3 9 3 , IT E 4 3 9 1 -IT E 4 3 9 3 G 01E 10978 D 2N4391 - 2N 4393, ITE4391- ITE4393 & N-Channel JFET Switch FEATURES ABSOLUTE MAXIMUM RATINGS • rd5(on <300 Ohms (2N4391)

t1is

Abstract: U202 U200 U201 N-Channel JFET Switch
Contextual Info: SOLI» STATE □1 DE [ 3fl750fll 0D11DS5 01E 11052 D U200-U202 N-Channel JFET Switch FEATURES APPLICATIONS • Low Insertion Loss • Good OFF Isolation • Analog Switches • Commutators • Choppers PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted

rs808

Contextual Info: HUF76112SK8 Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low

RS808

Abstract: AN7254 AN9321 AN9322 HUF76112SK8 HUF76112SK8T MS-012AA TB334 pspice model gate driver
Contextual Info: HUF76112SK8 TM Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low

Contextual Info: HUF76013P3, HUF76013D3S Data Sheet April 2000 File Number 4849.1 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low

3N170

Abstract: Hall 01E 3N171
Contextual Info: G Dl E SOLI» STATE DE I 307SDÛ1 D D l l G n 3875081 G E SOLID STATE 01E 11019 D 3 N1 7 0 , 3 N171 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES HANDLING PRECAUTIONS • Low • Fast • Low • Low MOS field-effect transistors have extremely high input re­

HUF76013P3

Abstract: TB334 76013D AN7254 HUF76013D3S HUF76013D3ST 640E3
Contextual Info: HUF76013P3, HUF76013D3S TM Data Sheet April 2000 File Number 4849 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low

ED26 diode

Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the

Contextual Info: DATASHEET 80V, 500mA, 3-Phase MOSFET Driver HIP4086, HIP4086A Features The HIP4086 and HIP4086A referred to as the HIP4086/A are three phase N-Channel MOSFET drivers. Both parts are specifically targeted for PWM motor control. These drivers have flexible input protocol for driving every possible switch