N-MOSFET P-MOSFET PAIR Search Results
N-MOSFET P-MOSFET PAIR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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N-MOSFET P-MOSFET PAIR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds |
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TC7320 TC7320 32-lead DSFP-TC7320 C122208 | |
Contextual Info: 20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM1563, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone |
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GSM1563, -20V/-1 -20V/-0 1440mâ Lane11 | |
Contextual Info: 30V N&P Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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GSM4539S, -30V/-5 -30V/-4 GSM4539SSF Lane11 | |
Contextual Info: N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6332 is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone |
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GSM6332 -20V/-1 -20V/-0 1440mâ Lane11 | |
ultrasound transducer circuit driver 1mhz
Abstract: gate-source zener TC6320 Piezoelectric 1Mhz 125OC 27BSC TC6320TG zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V
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TC6320 TC6320TG TC6320 27BSC DSFP-TC6320 C112106 ultrasound transducer circuit driver 1mhz gate-source zener Piezoelectric 1Mhz 125OC 27BSC zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V | |
Diode PJ 1266 IV
Abstract: LTC1267
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LTC1266 LTC1266A) LTC1148 LTC1149 LTC1159 LTC1174 LTC1265 LTC1267 0D1260^ Diode PJ 1266 IV LTC1267 | |
KTHC5513Contextual Info: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin |
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KTHC5513 KTHC5513 | |
Contextual Info: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring |
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MD1210 MD1210 DSFP-MD1210 B011507 | |
Contextual Info: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring |
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MD1210 MD1210 MO-220, DSPD-12QFNK64X4P080, A061708 DSFP-MD1210 C062408 | |
Contextual Info: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring |
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MD1210 1000pF MO-220, DSPD-12QFNK64X4P080, NR070208. DSFP-MD1210 C070208 | |
P channel MOSFET 10A
Abstract: P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410
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LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1735 LTC1772 OT-23 550kHz, LTC1929 1266fa P channel MOSFET 10A P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410 | |
Contextual Info: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout |
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LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1735 LTC1772 OT-23 550kHz, LTC1929 1266fa | |
A 1266
Abstract: ltc1266 CTXO212801 MBR0530T1 MBRS130LT3 Si9410 electrolytic capacitor 470
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LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1149 LTC1159 LTC1174 LTC1265 LTC1267 A 1266 ltc1266 CTXO212801 MBR0530T1 MBRS130LT3 Si9410 electrolytic capacitor 470 | |
voltage level shifter 3.3V to 5V
Abstract: ultrasound air ultrasound piezoelectric transducer for medical MD1210 MD1210K6-G TC6320TG SY QFN
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MD1210 MD1210 DSFP-MD1210 B011507 voltage level shifter 3.3V to 5V ultrasound air ultrasound piezoelectric transducer for medical MD1210K6-G TC6320TG SY QFN | |
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S 0240Contextual Info: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the |
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FDN340P S 0240 | |
Contextual Info: STS8C6H3LL N-channel 30 V, 0.019 Ω typ., 8 A, P-channel 30 V, 0.024 Ω typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code Channel VDS RDS on max ID 0.021 Ω 8A 0.030 Ω 5A N STS8C6H3LL 30 V P • STripFET™V N-channel Power MOSFET |
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DocID023495 | |
ultrasound transducer circuit driver
Abstract: logic level n channel MOSFET Logic Level N-Channel Power MOSFET mark vh mosfet High-Speed Switching 100mhz ultrasound block diagram ultrasound transducer Input output waveforms MD1210 MD1210K6-G MO-220
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MD1210 MD1210 DSFP-MD1210 C103008 ultrasound transducer circuit driver logic level n channel MOSFET Logic Level N-Channel Power MOSFET mark vh mosfet High-Speed Switching 100mhz ultrasound block diagram ultrasound transducer Input output waveforms MD1210K6-G MO-220 | |
Contextual Info: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high |
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MD1210 1000pF DSFP-MD1210 C100308 | |
ultrasound piezoelectric array
Abstract: mosfet High-Speed Switching 100mhz ultrasound transducer circuit driver MD1213 ultrasound transducer high power driver MD1213K6-G TC6320 voltage level shifter 3.3V to 5V voltage level shifter 0V to 5V MD-1213
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MD1213 MD1213 DSFP-MD1213 NR072007 ultrasound piezoelectric array mosfet High-Speed Switching 100mhz ultrasound transducer circuit driver ultrasound transducer high power driver MD1213K6-G TC6320 voltage level shifter 3.3V to 5V voltage level shifter 0V to 5V MD-1213 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of |
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SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 | |
Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS V N-Channel 20 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC |
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Si1555DL 2002/95/EC OT-363 SC-70 Si1555DL-T1-E3 Si1555DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
MD1210
Abstract: MD1210K6-G MO-220 TC6320TG
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MD1210 MD1210 DSFP-MD1210 C081309 MD1210K6-G MO-220 TC6320TG | |
MD1213
Abstract: MD-1213 ultrasound transducer CCD
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MD1213 1000pF MD1213 DSFP-MD1213 NR050208 MD-1213 ultrasound transducer CCD | |
MD-1213Contextual Info: MD1213 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a |
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MD1213 1000pF MD1213 MO-220, DSPD-12QFNK64X4P080, NR080408. DSFP-MD1213 A080808 MD-1213 |