N02 MOSFET Search Results

LN2302

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G S-LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 Features 2 High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

transistor sc 308

Abstract: NTES1N02 n02 mosfet
Contextual Info: NTES1N02 Product Preview Power MOSFET 50 mAmps, 20 Volts N–Channel SC–75 • • • • • 2.5 V Gate Drive Low Threshold Voltage: Vth = 0.5 to 1.5 V High Speed Enhancement Mode Small Package http://onsemi.com 50 mAMPS 20 VOLTS RDS on = 10 W N–Channel

n02 marking code sot

Abstract: transistor sc 308 NTUD01N02
Contextual Info: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits

80n02

Abstract: 80 N02 n02 mosfet 80-N02 on 80n02 NTD80N02T4 ntd80n02
Contextual Info: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Package May be Available. The G−Suffix Denotes a

sot-23 single diode mark PD

Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

80n02

Abstract: NTD80N02
Contextual Info: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Package May be Available. The G−Suffix Denotes a

n02 mosfet

Abstract: 80 n02 fet 85N02R NTD85N02R
Contextual Info: NTD85N02R Power MOSFET 85 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss

80n02

Abstract: 80 N02 80-N02 NTD80N02T4G on 525 80n02
Contextual Info: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • Pb−Free Package is Available Typical Applications

Contextual Info: Product specification 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching

80n02

Abstract: NTD80N02G 369D NTD80N02 NTD80N02T4 NTD80N02T4G 80-N02 on 525 80n02
Contextual Info: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • Pb−Free Packages are Available Typical Applications

WTC2302

Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement

Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive

F 5M 365 R

Abstract: 5M 365 R SOT23 MARKING N02 n02 mosfet 948S
Contextual Info: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits

NTD85N02R

Contextual Info: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Pb−Free Packages are Available

2416w

Abstract: NTD85N02R
Contextual Info: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge VDSS RDS(ON) TYP ID MAX 24 V 4.8 mΩ

80n02

Abstract: on 80n02 GE SOT-223 MARKING 80-N02 80 N02 SOT23 5 MARKING N02 NTD80N02 NTD80N02T4 N021
Contextual Info: NTD80N02 Advance Information Power MOSFET 80 Amps, 24 Volts N–Channel DPAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 80 AMPERES 24 VOLTS RDS on = 5.0 mΩ (Typ.)

NTD85N02R

Abstract: 85N02 NTD85N02RG 369D AN569 NTD85N02RT4 NTD85N02RT4G transistor n02 80 n02 fet
Contextual Info: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss

d30 n02

Abstract: n02 mosfet marking code dpak 425 NTD30N02
Contextual Info: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 30 AMPERES 24 VOLTS RDS on = 11.2 mW (Typ.) Typical Applications

80n02

Abstract: bergquist ge ntd80n02
Contextual Info: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • Power Supplies Converters

mosfet rqw 130

Abstract: amp op 4565 N02 Transistor rf RC 4565 RC 4565 SO TRANSISTOR 1PW Nippon capacitors 0/N02 Transistor rf
Contextual Info: 19- 1252; Rev 0; 7/97 V M / X I Æ Quad/Dual, Low -Voltage, B idirectional RF/Video S w itch es Features ♦ High 500 Off Isolation: -83dB at 10MHz ♦ Low 500 Crosstalk:-87dB at 10MHz ♦ DC to 350MHz -3dB Signal Bandwidth ♦ 600 Signal Paths with ±5V Supplies

ZXM61N02F

Abstract: ZXM61N02FTA ZXM61N02FTC top marking G62 DSA003663 n02 mosfet
Contextual Info: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)=0.18⍀
ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

marking 93A

Abstract: ZXM61N02F ZXM61N02FTA ZXM61N02FTC
Contextual Info: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching