N06 MOSFET Search Results

Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFN 200 N06 IXFN180 N07 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L ow trr Symbol N07 N06 N07 N06 70 60 70 60 V V V V Continuous ±20 V Transient ±30 V 180 A Td = 25°C to 150°C; RGS = 1 M ß

110N06

Abstract: 9000 044 053 siemens 110N07 P8000
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07

TO-264 Jedec package outline

Abstract: ID130 110N07
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07

9000 044 053 siemens

Abstract: 110N07
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07

n0612

Contextual Info: HiPerFETTM Power MOSFETs IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 60 V 60 V 70 V 70 V 76 A 76 A 76 A 76 A 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol

200N07

Abstract: 180N07 200N06 BT 1496
Contextual Info: HiPerFETTM Power MOSFETs VDSS Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient N07 N06 N07 N06 ID25 A TC= 25°C ID130 IDM IAR TC= 130°C, limited by external leads TC= 25°C, pulse width limited by TJM

Contextual Info: HiPerFETTM Power MOSFETs IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 60 V 60 V 70 V 70 V 76 A 76 A 76 A 76 A 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol

transistor ixfh application note

Abstract: n0612 N-0611
Contextual Info: HiPerFETTM Power MOSFETs IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 60 V 60 V 70 V 70 V 76 A 76 A 76 A 76 A 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol

Contextual Info: □ IXYS HiPerFET'“ V DSS IXFH IXFH IXFH IXFH Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 60 70 70 V V V V D DS on ^D25 76 76 76 76 A A A A 11 12 11 12 mQ mQ mQ mQ Preliminary data sheet

transistor ixfh application note

Abstract: Converters D119 VUO35-16 N07
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH IXFH IXFH IXFH N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 60 70 70 V V V V ID25 76 76 76 76 A A A A RDS on 11 12 11 12 mW mW mW mW Preliminary data sheet Symbol

Contextual Info: VDSS HiPerFET Power MOSFETs IXFH IXFH IXFH IXFH N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 V 60 V 70 V 70 V ^D25 76 76 76 76 A A A A p DS on 11 12 11 12 m£2 m il mQ mQ TO-247 AD Symbol Test Conditions

STM TO 247 package inductance

Contextual Info: H ÎYY^s JL flHVw A- Ik»!? HiPerFET Power MOSFETs V DSS IXFH IXFH IXFH IXFH N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 60 70 70 V V V V D DS on ^D25 76 76 76 76 A A A A 11 12 11 12 mQ

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

F16N06

Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Contextual Info: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

200N06

Abstract: SOT-227 Package
Contextual Info: HiPerFETTM Power MOSFETs IXFN 200 N06 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IL RMS TC= 25°C; Chip capability

200N07

Abstract: 200N06 180N07 IXFN180
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability

IXFN180

Abstract: 200N06
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability

Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability

Contextual Info: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i

76N06

Abstract: 76N07-11 76N07-12 70N06
Contextual Info: IXFH 76N07-11 IXFH 76N07-12 IXFH 76N06 nixY S Preliminary Data D HiPerFET Power MOSFETs IXFH 76N06 IXFH 76N07-11 IXFH 76N07-12 ^DSS ^D25 60 V 70 V 70 V 76 A 76 A 76 A DS on 11 m £2 11 m i2 1 2 m i2 trr 150 ns 150 ns 150 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family

200N06

Abstract: 4835 b 110N06 n
Contextual Info: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 IXFK110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)

Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

N06 MOSFET

Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology