N2 DIODE Search Results

TDA8357 equivalent

Abstract: TDA8359J equivalent pin voltages OF IC tda8357 TDA8359J tda8357 TDA8357j OF IC tda8357 TV flyback transformer TDA8359 tda9587h
Contextual Info: APPLICATION NOTE Application information for TDA8357J N2 and TDA8359J N2 deflection output circuits AN01056 Version 1.0 January 2002 Philips Semiconductors Philips Semiconductors TDA8357JN2 and TDA8359JN2 Vertical deflection output Application Note AN01056

Contextual Info: ;6 21  BGU6005/N2 Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 24 March 2014 Preliminary data sheet 1. Product profile 1.1 General description The BGU6005/N2 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU6005/N2 requires only

BZX384C75

Contextual Info: VISHAY BZX384C75_SIN_Spice Vishay Semiconductors BZX384C75_SIN Spice Parameters template bzx384_c75 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *

Modpex

Abstract: BZX384C2V7 vishay n5
Contextual Info: VISHAY BZX384C2V7_SIN_Spice Vishay Semiconductors BZX384C2V7_SIN Spice Parameters template bzx384_c2v7 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *

BZX84C5V6

Abstract: IS-1E-14 n3145 Modpex
Contextual Info: VISHAY BZX84C5V6_SIN _Spice Vishay Semiconductors BZX84C5V6_SIN Spice Parameters template bzx84_c5v6 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *

UDN2983A equivalent

Abstract: A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A UDN2984A UDN2984LW
Contextual Info: Data Sheet 29310E 2981 THRU 2984 8-CHANNEL SOURCE DRIVERS UDN2981A thru UDN2984A 18 2 17 3 16 4 15 5 14 6 13 7 12 Th e an UD d N2 — UD 98 Sh N2 3A ow 98 , A n 4LW 298 fo 4S a r r re L ef d W, er isc U en o DN ce nti 29 on nue 84A ly d. , . 1 Recommended for high-side switching applications that benefit from

IC udn 2981

Abstract: UDN2983A equivalent 113A CMOS A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A
Contextual Info: Data Sheet 29310E 2981 THRU 2984 8-CHANNEL SOURCE DRIVERS UD N2 Th ac 98 eA ce 3A di pt is sc 29 ed L on 84 un AS tin SL til Tue W, Oc TIM d. UD to E Sh N2 be B ow 98 r 2 UY 4 n A, 9, w fo & ith 2 rr U 04 or D ef N . de er 29 rs en 8 ce 4LW on a ly re . UDN2981A thru UDN2984A

Contextual Info: AEC-Q101 Qualified Schottky barrier diode RB521CS-30FH zApplications Low current rectification zLand size figure Unit : mm zDimensions (Unit : mm) 0.16±0.05 0.55 0.45 0.6±0.05 0.45 VM N2 3) High reliability zStructure 1.0±0.05 0.9±0.05 0.5 zFeatures

M2 DIODE

Abstract: TDA8359J equivalent TDA9587H flyback transformer philips TV AN10114-01 East west single transistor TDA8359J crt vertical deflection circuit TDA935X AN10114
Contextual Info: APPLICATION NOTE Application information for TDA8358J N2 deflection output circuit with East - West amplifier AN10114-01 Version 1.0 June 2002 Philips Semiconductors Philips Semiconductors TDA8358JN2 Vertical deflection output + East - West amplifier Application Note

TDA 8841 IC

Abstract: TDA 8844 equivalent tda 8842 equivalent Block Diagram tda 8374 A Block Diagram tda 8374 TDA8841 TDA8841 free Block Diagram tda 8843 Block Diagram tda 8842 TDA8843
Contextual Info: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA884X/5X-N2 series I2C-bus controlled PAL/NTSC/SECAM TV processors Tentative Device Specification Philips Semiconductors December 16, 1997 Previous version: April 24, 1997 Philips Semiconductors Tentative Device Specification

ASD751V-N2

Contextual Info: Formosa MS Advanced Schottky Barrier Diodes ASD751V-N2 Surface mount small signal type Features 0.106 2.7 0.090 (2.3) 0.012(0.3) Typ. Extermely low VF Extermely thin package R0.5 (0.02) Typ. 0.053 (1.35) 0.045 (1.15) Low stored charge Majority carrier conduction

Contextual Info: Schottky barrier diode RB521CS-30 Applications Low current rectification Dimensions Unit : mm Land size figure (Unit : mm) 0.55 0.16±0.05 0.5 0.45 0.6±0.05 0.45 0.9±0.05 VM N2 3) High reliability Structure 1.0±0.05 Features 1) Ultra Small power mold type

transistor marking N1

Abstract: marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004
Contextual Info: 02/22/2006 www.niccomp.com | tech support: tpmg@niccomp.com COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD N1 PART NUMBER CODE: N1 = NRD4001, N2 = NRD4002, N3 = NRD4003, N4 = NRD4004 N5 = NRD4005, N6 = NRD4006, N7 = NRD4007

RB521CS-30

Contextual Info: Schottky barrier diode RB521CS-30 zApplications Low current rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.16±0.05 0.55 0.45 0.6±0.05 0.45 0.9±0.05 VM N2 3) High reliability zStructure 1.0±0.05 0.5 zFeatures 1) Ultra Small power mold type

transistor d711

Contextual Info: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA 9321H-N2 I2C-bus controlled TV input processor Final Device Specification Philips Semiconductors May 28, 1999 Previous version: April 27, 1999 Philips Semiconductors Final Device Specification I2C-bus controlled TV input processor

tda 9381 ps

Abstract: TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt
Contextual Info: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.8 Integrated Circuits, <Handbook> Version: 2001 Jan 18 Previous date: 2000 Nov 29

TDA 0200

Contextual Info: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.85 Integrated Circuits, <Handbook> Version: 2001 Apr 12 Previous date: 2000 Nov 29

YG225C2

Abstract: YG225D2 YG225N2
Contextual Info: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

YG225N2

Abstract: yg225d2 YG225C2
Contextual Info: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

YG225N2

Abstract: YG225C2 YG225D2 200V 10A
Contextual Info: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

2n60

Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
Contextual Info: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Contextual Info: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

Contextual Info: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

YG233C2

Abstract: YG233D2 YG233N2
Contextual Info: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0