N28F001BX 120 Search Results

PLCC pin configuration

Abstract: N28F256A type 32D N28F010 N28F020 N28F512
Contextual Info: CIC-32PL-32D-A6-YAM 32-Lead PLCC to a 32-Pin DIP 3/98 EXAMPLES PLCC DEVICES: N28F001BX N28F010 N28F020 N28F256A SOCKET: PIN CONFIGURATION: BASE 32-Pin DIP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 N28F512 Yamaichi IC51-0324-4531

N28F010

Abstract: N28F256A N28F020 N28F512 PLCC socket pin configuration n28f010 dimensions
Contextual Info: CIC-32PL-32D-A6-YAM 32-Lead PLCC to a 32-Pin DIP 7/97 EXAMPLES PLCC DEVICES: N28F001BX N28F010 N28F020 N28F256A SOCKET: PIN CONFIGURATION: BASE 32-Pin DIP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 N28F512 Yamaichi IC51-0324-4531

8088 memory interface SRAM

Abstract: 28F010 microprocessor 80286 internal architecture intel 8086 intel microprocesser 8086 mcs 96 programming 64 pin microprocesser 8086 microprocessor introduction 2181G 8088 microprocessor
Contextual Info: E AP-380 APPLICATION NOTE Upgrading System Designs from Bulk Erase to Boot Block Flash Memories BRIAN DIPERT SENIOR TECHNICAL MARKETING ENGINEER August 1996 Order Number: 292129-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

29212* intel

Contextual Info: in te i, A P ' 3 8 0 APPLICATION NOTE Upgrading System Designs from Bulk Erase to Boot Block Flash Memories BRIAN DIPERT SENIOR TECHNICAL MARKETING ENGINEER October 1993 I Order Number: 292129-001 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors

P28F001

Abstract: 29040 N28F001BX-T150 28F001BX-B 28F001BX-T
Contextual Info: intJ 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V +10% Vcc

PLCC 32 intel package dimensions

Abstract: 845 bios chip intel 845 circuit diagram all chip TSOP 48 thermal resistance TSOP 48 LAYOUT ap623 am 28f040 AP-623 PCB Layout tsop 48 PIN SOCKET
Contextual Info: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel’s Boot Block Flash Memory December 1996 Order Number: 292178-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

XT150

Abstract: xt90
Contextual Info: in tj 28F001BX-T/28F001BX-B 1M 128K X 8 CMOS FLASH MEMORY High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time

Contextual Info: in te i 1-MBIT 128Kx 8 BOOT BLOCK FLASH MEMORY 28F001BX- T/28F001BX-B/28F001BN- T/28F001BN-B High-lntegration Blocked Architecture — One 8 KB Boot Block w /Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns

28F001

Abstract: intel 28F001BXT
Contextual Info: in t e i, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase

N28F001BX-T150

Abstract: 28F001BX-B N28F001BX 120 intel 80c188 users manual
Contextual Info: in te i 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Archltecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase

P28F001

Abstract: 28F001BX-B 28F001BXB
Contextual Info: in te i • 1-MBIT 128K x 8 BOOT BLOCK FLASH MEMORY 28 F 0 0 1 B X - T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N - T /2 8 F 0 0 1 B N -B u High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block

INTEL ES

Abstract: p28f001 BXT150 28F001BX-B 28F001BX-T
Contextual Info: in te i 1-MBIT 128Kx 8 BOOT BLOCK FLASH MEMORY 2 8 F 0 0 1 B X - T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N - T /2 8 F 0 0 1 B N -B m High-lntegration Blocked Architecture — One 8 KB Boot Block w /Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block