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    N4 MARKING Search Results

    N4 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC
    		Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C
    		Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    54ACT157/VFA-R
    		Rochester Electronics LLC 54ACT157/VFA-R - Dual marked (5962R8968801VFA) Visit Rochester Electronics LLC Buy
    54LS37/BCA
    		Rochester Electronics LLC 54LS37/BCA - Dual marked (M38510/30202BCA) Visit Rochester Electronics LLC Buy
    MG8097/B
    		Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    N4 MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking n4

    Abstract: KRC417E N4 MARKING
    Contextual Info: SEMICONDUCTOR KRC417E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N4 No. Item Marking 1 Device Mark N4 KRC417E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1


    Original     		KRC417E marking n4 KRC417E N4 MARKING PDF

    DRCF123J

    Abstract: drcf123
    Contextual Info: DRCF123J Tentative Total pages page DRCF123J Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF123J DRCF123J drcf123 PDF

    marking n4

    Abstract: KRC867E N413 N4 MARKING
    Contextual Info: SEMICONDUCTOR KRC867E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking N4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N4 KRC867E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		KRC867E marking n4 KRC867E N413 N4 MARKING PDF

    marking n4

    Abstract: KRC867U N4 MARKING
    Contextual Info: SEMICONDUCTOR KRC867U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking N4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N4 KRC867U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		KRC867U marking n4 KRC867U N4 MARKING PDF

    N4 SOT23

    Abstract: N4 marking KRC117S marking n4 N4 SOT-23
    Contextual Info: SEMICONDUCTOR KRC117S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking N4 No. 1 Item Marking Device Mark N4 KRC117S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		KRC117S OT-23 N4 SOT23 N4 marking KRC117S marking n4 N4 SOT-23 PDF

    KRC667U

    Contextual Info: SEMICONDUCTOR KRC667U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 N4 1 2 Item Marking Description Device Mark N4 KRC667U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs


    Original     		KRC667U KRC667U PDF

    KRC417

    Contextual Info: SEMICONDUCTOR KRC417 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 N4 1 2 Item Marking Description Device Mark N4 KRC417 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		KRC417 KRC417 PDF

    marking n4

    Abstract: KRC667E N413
    Contextual Info: SEMICONDUCTOR KRC667E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking N4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N4 KRC667E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		KRC667E marking n4 KRC667E N413 PDF

    DZ36068D

    Abstract: DZ36
    Contextual Info: Tentative DZ36068D Total pages page DZ36068D Silicon epitaxial planar type For surge absorption circuit Marking Symbol : 02 Package Code: ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Total power dissipation Junction temperature


    Original     		DZ36068D DZ36068D DZ36 PDF

    UL-510

    Abstract: SOCRATES UL510 22622 epcos 230 08 AM113 E17385 PEB 22622 PEB22622 PEB 22622 SOCRATES
    Contextual Info: EP13 Interfacetransform for Socrates PEB 22622, 24622 13.02.2004 Preliminary Datasheet Ordering Code: Dimensions [mm]: Schematics: 5 T0127/54/01 B78421A1801A003 7 N1 LineSide 2 4 N3 1 9 6 N4 10 ChipSide N2 SenseWinding Marking: EPCOS middle block date code


    Original     		T0127/54/01 B78421A1801A003 UL-510 SOCRATES UL510 22622 epcos 230 08 AM113 E17385 PEB 22622 PEB22622 PEB 22622 SOCRATES PDF

    DRCF114Y

    Contextual Info: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF114Y DRCF114Y PDF

    DRCF143E

    Contextual Info: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF143E DRCF143E PDF

    DRAF124E

    Contextual Info: DRAF124E Tentative Total pages page DRAF124E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRAF124E DRAF124E PDF

    DA36103E

    Abstract: da361
    Contextual Info: DA36103E Tentative Total pages page DA36103E Silicon epitaxial planar type For high speed switching Marking Symbol : 24 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current


    Original     		DA36103E DA36103E da361 PDF

    DRCF144E

    Contextual Info: DRCF144E Tentative Total pages page DRCF144E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF144E DRCF144E PDF

    V 904 RL 805

    Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
    Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures


    OCR Scan     		BFG520W BFG520W/X; BFG520W/XR OT343 OT343R BFG520W/X BFG520W/XR 7110fli V 904 RL 805 N4 TAM transistor fp 1016 DIN45004B PDF

    DSCF001

    Contextual Info: Tentative DSCF001 Total pages page DSCF001 Silicon NPN epitaxial planar type For general amplification Marking Symbol : C1 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DSCF001 DSCF001 PDF

    DRCF114W

    Contextual Info: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF114W DRCF114W PDF

    DRCF113Z

    Contextual Info: DRCF113Z Tentative Total pages page DRCF113Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N1 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF113Z DRCF113Z PDF

    DSAFG01

    Contextual Info: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DSAFG01 DSAFG01 PDF

    DRAF143E

    Contextual Info: DRAF143E Tentative Total pages page DRAF143E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRAF143E DRAF143E PDF

    DRCF143T

    Contextual Info: DRCF143T Tentative Total pages page DRCF143T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF143T DRCF143T PDF

    DRCF114E

    Abstract: drcf114
    Contextual Info: DRCF114E Tentative Total pages page DRCF114E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NB Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRCF114E DRCF114E drcf114 PDF

    DRAF143Z

    Contextual Info: DRAF143Z Tentative Total pages page DRAF143Z Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L8 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRAF143Z DRAF143Z PDF