Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N5551 TRANSISTOR Search Results

    N5551 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    N5551 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    n5551 transistor

    Abstract: n5551 BTN5551A3 BTP5401A3
    Contextual Info: CYStech Electronics Corp. Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		C208A3 BTN5551A3 BTN5551A3 BTP5401A3 UL94V-0 n5551 transistor n5551 BTP5401A3 PDF