N6 MARKING DIODE Search Results

transistor marking N1

Abstract: marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004
Contextual Info: 02/22/2006 www.niccomp.com | tech support: tpmg@niccomp.com COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD N1 PART NUMBER CODE: N1 = NRD4001, N2 = NRD4002, N3 = NRD4003, N4 = NRD4004 N5 = NRD4005, N6 = NRD4006, N7 = NRD4007

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

FDN363N

Abstract: N6 marking diode marking n9
Contextual Info: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)

m079

Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Contextual Info: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse

76404DK8

Abstract: HUFA76404DK8T RG103 KP108
Contextual Info: HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features Applications „ rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A „ Motor / Body Load Control „ Qg(tot) = 3.8nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management „ Low QRR Body Diode

HUFA76404DK8T

Abstract: NL103
Contextual Info: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode

13E1

Contextual Info: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode

micro SD card CARD PCB FOOTPRINT

Abstract: EMIF06-MSD02N16 micro sd card circuit diagram for spi mode MICRO SD card footprint PCB SD card CARD PCB FOOTPRINT SD card footprint PCB micro sd card circuit diagram JESD97 N6 marking diode
Contextual Info: EMIF06-MSD02N16 6-line IPAD , EMI filter and ESD protection Features High design flexibility • Lead free package ■ Very low PCB space consumption: 3.5 mm x 1.2 mm ■ Very thin package: 0.5 mm ■ High efficiency in ESD suppression ■ IEC 61000-4-2 level 4

SD card CARD PCB FOOTPRINT

Abstract: SD card footprint PCB
Contextual Info: EMIF06-MSD02N16 6-line IPAD , EMI filter and ESD protection Features High design flexibility • Lead free package ■ Very low PCB space consumption: 3.5 mm x 1.2 mm ■ Very thin package: 0.5 mm ■ High efficiency in ESD suppression ■ IEC 61000-4-2 level 4

N6 marking diode

Abstract: zener diode n8 n2 Diode Zener diode marking N9 M7 zener diode MARKING CODE N0 Marking N8 ZENER DIODE n2 sod marking m7 cmoz8l2
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

N6 marking diode

Abstract: SOD marking N1 diode marking N9 MARKING CODE N0 zener diode n8
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

zener diode n8

Abstract: Diode marking m7 N6 marking diode L9 Zener M7 zener zener n7 sod marking m7 n2 Diode Zener M7 zener diode CMOZ11L
Contextual Info: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,

Diode marking m7

Abstract: L9 zener zener diode n8 M7 zener ZENER DIODE M5 diode MARKING CODE P9 n2 Diode Zener marking code M6 marking CODE n3 marking CODE n5
Contextual Info: Central CMOZ1L8 THRU CMOZ47L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

zener diode n8

Abstract: N6 marking diode M7 zener diode Diode marking m7 diode MARKING CODE P9 n2 Diode Zener ZENER MARKING r8 ZENER DIODE P8 marking code zener diode A SOD523 M2 MARKING CODE
Contextual Info: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,

Zener Diode SOD523 24v

Abstract: marking code zener diode A SOD523 sod marking m7 zener diode n8 M7 marking diode sod m7 M7 zener diode diode marking N9
Contextual Info: Central" CMOZ2L4 THRU CMOZ43L Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an

DDTA144ELP

Abstract: DDTC144ELP DDTC144ELP-7 DFN1006-3 marking K
Contextual Info: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes

Diode marking m7

Abstract: zener diode n8 zener diode M7 M7 zener CMOZ10L CMOZ11L CMOZ12L CMOZ13L CMOZ15L CMOZ16L
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

ZENER DIODE M5

Abstract: zener diode n8 Diode marking m7 zener n7 diode 24 M7 zener marking of m7 diodes N6 marking code zener diode M7 n2 Diode Zener
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

Contextual Info: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes

mosfet marking code N9

Abstract: mosfet marking code KP FDP8896
Contextual Info: FDP8896 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

2511NZ

Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDP8874

Abstract: 38e6
Contextual Info: FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low