N6109 Search Results

HXNV0100

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

5962-07A05

Abstract: HX422D MIL-PRF38535 ES1V
Contextual Info: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V

Contextual Info: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V

HMXADC9246

Abstract: honeywell dcs manual honeywell SOI CMOS solid state 220 volt stabilizer circuit honeywell dcs features radiation hardened prom
Contextual Info: HMXADC9246 Preliminary Radiation Hardened 14-Bit, 125 MSPS Monolithic A/D Converter Features • Monolithic 14-Bit, 125 MSPS A/D Converter ■ Rad Hard: >1M Rad Si Total Dose ■ +1.8V V Analog Supply ■ +1.8V to 3.3V Digital I/O Supply ■ Low Power: 400 mW at 125 MSPS

TIP31c PNP Transistor

Abstract: n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c
Contextual Info: PLASTIC POWER P L A S T IC PO W ER T R A N S IS T O R S E L E C T O R C H A R T TO-220 P A C K A G E lc 3 Am ps (TIP) lc 4 Am ps (BD) V CEO Volts NPN PNP 7 Am ps 5 Am ps NPN NPN PNP 2N6288 2N6111 PNP 30 7 Am ps NPN PNP 40 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42

Contextual Info: HMXCMP01 Radiation Hardened Comparator Features • ■ ■ ■ ■ Rad Hard >300krad Si Analog supply voltage: 4.75V to 5.25V Digital supply voltage: 3.135V to 5.25V Supply current: <2mA Common mode voltage range: 0V to 5V ■ Input offset voltage: <24mV

honeywell TS2

Abstract: 28-pin QFP DB10 MIL-PRF38535 HMXDAC01 rad analog to digital converter 10 ,bit rad digital to analog converter 14 bit
Contextual Info: HMXDAC01 Radiation Hardened 12-Bit, Monolithic D/A Converter Features • Monolithic 12-Bit D/A Converter ■ Rad Hard: >300k Rad Si Total Dose ■ Single +5 V Analog Supply ■ 5V or 3.3V Digital and I/O Supply ■ Offset Error: < ±0.2% FSR ■ ■ ■

Contextual Info: HMXDAC01 Radiation Hardened 12-Bit, Monolithic D/A Converter Features • Monolithic 12-Bit D/A Converter ■ Rad Hard: >300k Rad Si Total Dose ■ Single +5 V Analog Supply ■ 5V or 3.3V Digital and I/O Supply ■ Offset Error: < ±0.2% FSR ■ ■ ■

TIP 2n3055

Abstract: tip41c tip42c 2n3055 2N3055 TO-220 2n3055 application note OF transistor 2n3055 to-3 package 7 amps pnp transistor 2N3055 TO220 NPN 1.5 AMPS POWER TRANSISTOR n6111 2N6103
Contextual Info: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching

HXNV0100

Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

CMP01

Abstract: MIL-PRF38535 HMXCMP01
Contextual Info: HMXCMP01 Radiation Hardened Comparator Features • ■ ■ ■ ■ Rad Hard >300krad Si Analog supply voltage: 4.75V to 5.25V Digital supply voltage: 3.135V to 5.25V Supply current: <2mA Common mode voltage range: 0V to 5V ■ Input offset voltage: <24mV

Contextual Info: HTADC12 High Temperature 12-Bit A/D Converter over the full operating temperature range of -55°C to +225°C. The HTADC12 is fabricated on a high temperature SOI-IV Silicon On Insulator SOI process with very low power consumption. The input of the HTADC12 allows for easy interfacing to sensors