NANOSECOND Search Results

diode 944 lg

Abstract: B301A ga331 LT 943 diode 945 lg
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this

P6002AD

Abstract: 1600VAC teccor Invensys
Contextual Info: TECCOR E L E C T RO N I C S 1 2 3 ´$µ3DFNDJH 0RGLILHG72 P6002AD HDWXUHV • Bidirectional transient voltage protection • Clamping speed of nanoseconds • Surge current capability 300A, 10 x 1000µs and 1000A, 2 x 10µs • Glass passivated junctions for superior reliability

three phase full wave uncontrolled rectifier

Abstract: S10A3100 S10A320 S10A340 S10A360 S10A380
Contextual Info: S10A320 S10A340 S10A360 S10A380 S10A3100 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1046, REV. - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 200/400/600/800/1000 VOLT, 11 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY.

Contextual Info: I teccor Mill ELECTRONICS, INC. DO-214AA SIDACtmr" Solid State Overvoltage Protection Features • Bidirectional transient voltage protection • Clamping speed of nanoseconds • Surge current capability - 500A, 2x10ns waveform • Available on tape and reel

Contextual Info: MURHF860CT Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Times

nec 2401

Abstract: 400P DE375-102N10A Directed Energy
Contextual Info: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR

DYMEC 5024

Abstract: 74hcl 741C1 74hci 3B10 3B14 74HCT244 74HCT245 74HCT688 xt winchester
Contextual Info: MODEL: 5024 24-Bit Programmable Counter/Timer time base. The time base can range from hundreds of nanoseconds to tens o f seconds, with specific time values depending upon the frequency o f a timing reference. The timing reference for the counter/timer may be either a

Contextual Info: 57C4502-50/65/80 High Density First-in First-out FIFO 1024x9 CMOS Memory cn ~>l O Advance Information DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum

Contextual Info: 57C4501-50/65/80 a High Density First-in First-out FIFO 512x9 CMOS Memory Ol Advance Information •*1 DISTINCTIVE CHARACTERISTICS RAM based FIFO 512x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum

AM7203

Contextual Info: Advance Information a Advanced Micro Devices Am7203-40/50/65/80 High Density First-in First-out FIFO 2048x9 CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO Status flags - full, half-full, empty • 2048x9 organization Retransmit capability • Cycle times of 50/65/80/100 nanoseconds

Contextual Info: 57 C4500-40/50/65/80 High Density First-in First-out FIFO 256x9 CMOS Memory A d van ce Inform ation DISTINCTIVE CHARACTERISTICS RAM based FIFO 256x9 organization Cycle times of 50/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum

Contextual Info: 67C4503-35/50/65/80 Deep First-in First-out FIFO 2048x9 C M O S Memory DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable in both width an djlepth Increased noise immunity for XI-CMOS threshold RAM based FIFO 2048x9 organization Cycle tim es of 45/65/80/100 nanoseconds

Contextual Info: DL1L series, SIP thin film delay lines This series permits a timing adjustment from 0.1 to 10 nanoseconds with accuracy of +/-0.05 nanoseconds. Return losses remain as stable as 20dB. SPECIFICATIONS Mechanical Time Delay Time Delay Tolerance H 7.50max 0.1ϳ1.2ns

DDD111G

Contextual Info: b3E D AMERICAN/ELECTRONIC • Db7la743 D D O l l Q ^ 010 « E D I 300 NANOSECOND AT 200°C HIGH TEMPERATURE— FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES • Exceptional high temperature stability up to 200°C • Exceptional low leakage no leakage drift at these elevated temperatures. All diodes are subjected to 10 test

indalloy 8

Abstract: MA4AGP907 MA4AGP907-T MA4AGP907-W
Contextual Info: AlGaAs Flip-Chip PIN Diode MA4AGP907 V1 Features Package Outline • • • • • • • Top View Shown Is With Diode Junction Up Low Series Resistance, 3 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed

SW-338

Abstract: M513 MASWSS0180 MASWSS0180SMB MASWSS0180TR SPDT Terminated Switch
Contextual Info: RoHS Compliant GaAs SPDT Terminated Switch DC - 2.5 GHz Features • • • • • • • • • • MASWSS0180 V1 Functional Schematic Very Low Power Consumption High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed

MA4AGSBP907

Abstract: MA4AGSBP907-T MA4AGSBP907-W Low Forward Voltage Diode
Contextual Info: AlGaAs Solder Bump Flip-Chip PIN Diode MA4AGSBP907 Rev 2.0 Features • Low Series Resistance, 4 Ω • Ultra Low Capacitance, 25 fF • High Switching Cutoff Frequency, 40 GHz • 2 Nanosecond Switching Speed • Can be Driven by Buffered TTL • Silicon Nitride Passivation

MURD310

Abstract: MURD305 MURD315 MURD320 motorola dpak 305
Contextual Info: IMOTOROLA m SEMICONDUCTOR TECHNICAL DATA Switehmode Power MURD305 MuRD3~o MURD345~?’t$ , MURQ~zO ,+,‘Q3 Z? Rectifiers DPAK Surface Mount Package .designed these for use in switching state-of-the-art @ Ultrafast devices 35 Nanosecond @ Low Forward

Diode LT 432

Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
Contextual Info: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device

GA201

Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
Contextual Info: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level

DE275X2-102N06A

Abstract: 102N06 DE275X2 102N06A 400P DE-27
Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in

Contextual Info: Attenuators 0.5 - 26 GHz - Digitally Stepped 4 Bit - 50 nanoseconds Specifications: Frequency Range: 0.5 -18.0 GHz, 2.0-6.0 GHz, 6.0-18.0 GHz, and 1.0-26.0 GHz Attenuation Steps: 2,4 ,8 ,1 6 , and 30dB total Impedance: so Ohms VSWR: 1.70 max @ .5-8.0 GHz, and 2.0 max @ 8.0-26.0 GHz

Contextual Info: Attenuators DC - 2.5 GHz - Digitally Stepped 4 Bit or 6 Bit - 50 nanoseconds Specifications: Frequency Range: DC - 2.5 GHz Attenuation Steps: 2, 4, 8,16, and 30 dB total for 4 Bit Model 2, 4, 8,16, 32, and 62 dB total for 6 Bit Model Impedance: so Ohms VSWR: 1.50-max to 500 MHz and 2.0 max @ 500 -1 GHz ' -Insertion Loss: 0.5 dB max

Contextual Info: Cable Assemblies Coaxial Delay Lines Custom Delay Line Assemblies • 5 ,1 0, 25, 50, and 100 nanosecond Delay •Calibration Standards ■Spooled, Encapsulated or Packaged ■N, TNC, and SMA Connectors Midwest Microwaveoffers standard as well as custom coaxial delay